Essays about: "Metal Oxide Semiconductor Field Effect Transistor MOSFET"

Showing result 1 - 5 of 13 essays containing the words Metal Oxide Semiconductor Field Effect Transistor MOSFET.

1. 1. Design and Modeling of InxGa(1−x)As/InP based Nanosheet Field Effect Transistors for High Frequency Applications

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Hanyu Liu; Xi Chen; [2023]
   Keywords : nanosheet NS ; gate-all-around GAA ; channel release; parasitic channel; MATLAB; COMSOL; technology node; Technology and Engineering;

   Abstract : The advancement of CMOS technology has been fueled by the need to satisfy Moore’s law by shrinking transistors to progressively smaller sizes and increasing the transistor density per unit area [1]. The dimension of the state-of-the-art MOSFET is now down to a few nanometers. READ MORE

3. 2. Flashlamp Annealing for Improved Ferroelectric Junctions

   University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Theodor Blom; [2023]
   Keywords : Flashlamp annealing; ferroelectricity; hafnia oxide; III-V semiconductor; thermal annealing; device performance; Technology and Engineering;

   Abstract : The effects of flashlamp annealing (FLA) on the quality of ferroelectric HfxZr1–xO2 (HZO) interfaces, integrated on InAs substrates, are evaluated. For the integration of ferroelectric HZO on III-V semiconductors the crystallization via rapid thermal processing (RTP) can severely degrade the HZO/III-V interface. READ MORE

4. 3. Investigation of switching power losses of SiC MOSFET : used in a DC/DC Buck converter

   University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Author : André Xavier Svensson; [2022]
   Keywords : Switching power losses; Metal Oxide Semiconductor Field Effect Transistor; Silicon carbide; Synchronous Buck converter; Wide Band Gap; Double Pulse Test; Efficiency; Temperature; Växlande effektförluster; Fälteffekttransistor; Kiselkarbid; Synchronous Buck omvandlare; Wide Band Gap; Double Pulse Test; Verkningsgrad; Temperatur;

   Abstract : All DC/DC converter products include power electronic circuits for power conversion.It is important to find an efficient way for power conversion to reduce power losses and reduce the need for cooling and achieve environmentally friendly solutions.The use of semiconductor switches of wide band gap type is a solution to the problem. READ MORE

5. 4. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Sofie Johannesson; Sebastian Skog; [2022]
   Keywords : Vertical InGaAs Nanowire MOSFET Temperature Dependence Noise; Technology and Engineering;

   Abstract : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). READ MORE

6. 5. Numerical Simulation of 3.3 kV–10 kV Silicon Carbide Super Junction-MOSFETs for High Power Electronic Applications

   University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Author : Rishi Balasubramanian Saraswathy; [2022]
   Keywords : Super–Junction; DMOSFET; 4H-SiC; Silicon Carbide; Wide bandgap; 6.5 kV; 10 kV; On-state resistance; Breakdown voltage; Super–Junction; DMOSFET; 4H-SiC; kiselkarbid; bredbandgap; 6.5 kV; 10 kV; framspänningsfall; spärrspänning;

   Abstract : The thesis focuses on designing and characterizing SiC 3.3 kV Diffused Metal-Oxide Semiconductor Field-Effect Transistor (DMOSFET)s with a Ron that is significantly lower than that of current commercial devices. The On-state resistance and breakdown voltage are then adjusted by adding a Super-Junction structure. READ MORE