Essays about: "NWFET"
Showing result 1 - 5 of 6 essays containing the word NWFET.
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1. Ballistic Modeling of Nanowire MOSFETs
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : .... READ MORE
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2. Fabrication and Charaterisation of Finger Gates
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : In this thesis were vertical NWFETs (nanowire field-effect transistors) fabricated, and their electrical properties characterised. The main goal was to minimize the parasitic capacitances that limited the high frequency performance. The nanowires consisted of InAs/InGaAs heterojunctions, and were grown on top of Si via a buffer layer. READ MORE
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3. Simulation and TLM studies of vertical nanowire devices
University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionenAbstract : Vertical nanowire field effect transistors (NWFETs) have in this diploma work been studied in order to examine possible benefits of introducing a highly doped shell around the nanowire channel. It could be concluded that this new device geometry significantly enhances DC performance metrics. READ MORE
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4. Effect of active load on III-V NWFET Double-Balanced Gilbert Cells
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : Abstract A center point in the transistor research is to find a successor to the silicon-based transistors that are mainly used in today’s industry. III-V Field Effect Transistors (FET) have been the transistor of choice for many researchers for a long time but other options are interesting as well. READ MORE
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5. Simulations of III-V NWFET Double-Balanced Gilbert Cells with an Improved Noise Model
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : III-V nanowire transistors might provide a mean for extending Moore’s law, by overcoming the scaling limitations ultimately facing planar silicon CMOS. These high frequency capable transistors with cut-off frequencies in the terahertz regime are suitable for radio communication. READ MORE