Essays about: "Nanoblad fälteffekttransistorer"

Found 1 essay containing the words Nanoblad fälteffekttransistorer.

  1. 1. A Simulation Study of Variability in Gate-all-Around Nanosheet Transistors

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Virinchi Tirumaladass; [2022]
    Keywords : Gate-all-around; Nanosheet field effect transistors; process variations; variability; TCAD; Gate-all-around; Nanoblad fälteffekttransistorer; processvariationer; variabilitet; TCAD;

    Abstract : Gate-all-around (GAA) nanosheet field effect transistors (NSFETs) seem to be one of the most promising replacement options for FinFETs towards scaling down below to the sub-7nm technology nodes. They offer better electrostatics and control of short channel effects (SCEs) due to their superior control over the channel and their large effective channel width. READ MORE