Essays about: "Nanowire MOSFET"

Showing result 1 - 5 of 14 essays containing the words Nanowire MOSFET.

1. 1. Design and Modeling of InxGa(1−x)As/InP based Nanosheet Field Effect Transistors for High Frequency Applications

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Hanyu Liu; Xi Chen; [2023]
   Keywords : nanosheet NS ; gate-all-around GAA ; channel release; parasitic channel; MATLAB; COMSOL; technology node; Technology and Engineering;

   Abstract : The advancement of CMOS technology has been fueled by the need to satisfy Moore’s law by shrinking transistors to progressively smaller sizes and increasing the transistor density per unit area [1]. The dimension of the state-of-the-art MOSFET is now down to a few nanometers. READ MORE

3. 2. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Sofie Johannesson; Sebastian Skog; [2022]
   Keywords : Vertical InGaAs Nanowire MOSFET Temperature Dependence Noise; Technology and Engineering;

   Abstract : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). READ MORE

4. 3. E-Band SPDT RF Switch for a Class F PA in III-V Nanowire MOSFET Technology

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Rungeng Xu; [2022]
   Keywords : E-band; III-V Nanowire MOSFET; RF Switch; Class-F PA; Technology and Engineering;

   Abstract : This project designs an RF switch operating in E-band to provide a transmit path from a Class-F power amplifier (PA). The basic RF switch is based on the single-pole double-throw (SPDT) topology using shunt transistor switches and two λ/4 transmission line. READ MORE

5. 4. D-band Power Amplifiers in Vertical InGaAs Nanowire MOSFET Technology for 100 Gbps Wireless Communication

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Patrik Blomberg; Ludvig Pile; [2022]
   Keywords : D-band; Power Amplifier; Pseudo-differential common source; Stacked; Vertical InGaAs nanowire; MOSFET; Technology and Engineering;

   Abstract : Two different topologies of power amplifiers (PAs) are designed in the frequency range 130-174.8 GHz for use in backhaul transmitters. These are the pseudo-differential common source (PDCS) and the single-ended stacked amplifier topologies. READ MORE

6. 5. Nanowire based mm-wave LNA and switch design

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Andreas Grenmyr; [2020]
   Keywords : LNA mm-wave RF switch nanowire MOSFET; Technology and Engineering;

   Abstract : In this work, two LNAs operating at a frequency around 83 GHz and 110 GHz, for satellite- and 5G applications respectively, have been designed, using vertical InGaAs nanowire transistors. In addition, a switch operating at a frequency around 110 GHz has been designed. READ MORE