Essays about: "Ohmic contacts"
Showing result 1 - 5 of 14 essays containing the words Ohmic contacts.
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1. Thin Indium Tin Oxide Layer Development for Crystalline Silicon/Perovskite Two Terminal Tandem Solar Cell
University essay from KTH/Skolan för industriell teknik och management (ITM)Abstract : ITO is widely regarded as the optimal TCO for serving as front window layer in PSK/c-Si tandem solar cells. It is known to effectively mitigate several stability issues present in perovskite solar cells while demonstrating excellent lateral conductivities and optical transparency across the entire solar spectrum. READ MORE
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2. Niobium Ohmic Contacts for Cryogenic Indium Phosphide High-Electron-Mobility Transistors
University essay from KTH/Tillämpad fysikAbstract : Ohmic contacts are crucial components in semiconductor devices such as transistors and diodes, and lowering their contact resistance is an important factor in device performance enhancement. This is especially important for low-noise amplifiers (LNAs) where device noise temperature decreases both directly and indirectly with decreasing contact resistance. READ MORE
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3. Carbon nanomaterials as electrical conductors in electrodes
University essay from Luleå tekniska universitet/Institutionen för teknikvetenskap och matematikAbstract : In this project, different molecules have been investigated with the purpose of creating anohmic contact between metals and carbon nano materials. In particular, we considered simplemolecules connecting a graphene layer and a copper-slab. READ MORE
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4. Study of ohmic contact formation on AlGaN/GaN heterostructures
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : It is challenging to achieve low-resistive ohmic contacts to III-nitride semiconductors due to their wide bandgap. A common way to reduce the contact resistance is to recess the ohmic area prior to metallization. READ MORE
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5. Processing and characterization of self-aligned Ni/Al and Co ohmic contacts to 4H-SiC
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : New self-aligned silicide processes for the realization of Ni/Al and Co contacts to silicon carbide (4H-SiC) are presented and contacts are characterized using the transfer length method (TLM). Since cobalt silicide formation on 4H-SiC has not been investigated before, interface reaction between Co and 4H-SiC as well as the study on the annealing temperatures constitute an essential part of this work. READ MORE