Essays about: "Plasma Etching"

Showing result 1 - 5 of 13 essays containing the words Plasma Etching.

  1. 1. Real- and Quasi-Atomic Layer Etching for Ultra-High Resolution Patterning

    University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Author : Yoana Ilarionova; [2023]
    Keywords : Physics and Astronomy;

    Abstract : An attempt was made at developing atomic layer etching from a cyclic etching process in an ICP-RIE tool. During the process OES was used for contamination monitoring and estimation of the relative amount of Cl2 left in the chamber during the etch step of cyclic etching processes. READ MORE

  3. 2. Developing an Ar milling process to improve the contact quality to InAs nanowires

    University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

    Author : Chris Mkolongo; [2023]
    Keywords : InAs nanowires; Argon milling; Technology and Engineering;

    Abstract : The aim of this work was to develop a stable and reproducible argon milling process for InAs nanowires to remove the native oxide layer that increases electrical resistance. This was done by identifying a few milling parameters and studying them in relation to the milling rate of silicon dioxide (SiO2). READ MORE

  4. 3. Damage Analysis of Reactive Ion and Atomic Layer Etched Silicon

    University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Author : Mohammad Al Abrash; [2023]
    Keywords : Technology and Engineering;

    Abstract : Dry etching is one of the most important methods of pattern transfer in nanofabrication. There are many dry etching methods, the most commonly used is reactive ion etching (RIE), that is based on a continuous supply of reactive ions and radicals generated in a radio-frequency (RF) plasma discharge. READ MORE

  5. 4. BCP Lithography Defined Arrays of InAs NWs Grown Using MOVPE with Au Seeds

    University essay from Lunds universitet/Lunds Tekniska Högskola; Lunds universitet/Fasta tillståndets fysik

    Author : Björn Landeke-Wilsmark; [2022]
    Keywords : Physics and Astronomy;

    Abstract : In this report we outline a detailed process flow for a quick and inexpensive implementation of large dense arrays of InAs nanowires (NWs) grown in the reactive ion etching/etched (RIE) pores of a SiO2/SiNx mask on top of an InAs/Si(111) substrate. The self-assembled (hexagonally close-packed) pattern of poly(methyl-methacrylate) (PMMA) cylinders in a poly(styrene) (PS) matrix adopted by a linear diblock poly(styrene-block-methyl-methacrylate) P(S-b-MMA) block-copolymer (BCP) was transferred to the dielectric stack (consisting of a ≈10 nm plasma enhanced chemical vapour deposition/deposited (PECVD) SiNX layer topped by a thin atomic layer deposition/deposited (ALD) SiO2 film) using a two-step RIE procedure. READ MORE

  6. 5. Design and fabrication of Si diaphragms for capacitive pressure sensors in high-pressure microfluidics

    University essay from Uppsala universitet/Mikrosystemteknik

    Author : Elin Rosén; [2021]
    Keywords : ;

    Abstract : The pressure has a major impact when it comes to control of chemical processes. A method for integrating electrical pressure sensors in high-pressure microfluidic chips has, however, so far not been developed and the aim of this project was therefore to study how capacitive pressure sensors could be designed and fabricated to measure pressures between 1-100 bar. READ MORE