Essays about: "Resistive random-access memory RRAM"

Found 5 essays containing the words Resistive random-access memory RRAM.

  1. 1. Study of the Resistive Switching Mechanism in Novel Ultra-thin Organic-inorganic Dielectric-based RRAM through Electrical Observations

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Alba Maria Martinez Garcia; [2021]
    Keywords : Resistive random-access memory RRAM ; flexible electronics; organic-inorganic hybrid dielectric; dual-mode conducting filament; electrical programming; Resistivt slumpmässigt åtkomstminne RRAM ; flexibel elektronik; organisk-oorganisk hybrid dielektrikum; dubbelt läge ledande glödtråd; elektrisk programmering;

    Abstract : The promising role resistive random-access memory (RRAM) plays in the imminent reality of wearable electronics calls for a new, updated physical model of their operating mechanism. Their high applicability as the next-generation flexible non-volatile memory (NVM) devices has promoted the recent emergence of a novel ultra-thin (< 5nm) organic/inorganic hybrid dielectric RRAM. READ MORE

  3. 2. Investigation of Resistive Random Access Memory for 1T1R Nanowire Array Integration

    University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Author : Orestes Theodoridis; [2020]
    Keywords : RRAM; Nanowire; Memory Technology; Nanoelectronics; Nanoscience; Physics and Astronomy;

    Abstract : As modern electronics have started to reach its physical scaling limits, novel architectures and physics is needed to meet future demands. Oxide-based Resistive Random Access Memory (RRAM) is a new emerging technology that uses filament formation and rupture in thin oxides to generate resistive switching. READ MORE

  4. 3. HfO2 and ITO Resistive Random-Access Memory

    University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Author : Mattias Åstrand; [2020]
    Keywords : RRAM; Resistive switching; HfO2; ITO; Physics and Astronomy;

    Abstract : The purpose of this work is of evaluating the choice of HfO2 and ITO as the dielectric and the top electrode in high performance resistive random-access memory (RRAM), respectively. The study is twofold, as it quantifies performance according to standard figures of merit for this technology, as well as provides insight into the physics of current conduction for this material choice. READ MORE

  5. 4. High Temperature Memories in SiC Technology

    University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)

    Author : Mattias Ekström; [2014]
    Keywords : ;

    Abstract : This thesis is part of the Working On Venus (WOV) project. The aim of the project is to design electronics in silicon carbide (SiC) that can withstand the extreme surface environmen  of Venus. This thesis investigates some possible computer memory technologies that could survive on the surface of Venus. READ MORE

  6. 5. System Level Exploration of RRAM for SRAM Replacement

    University essay from Elektroniksystem; Tekniska högskolan

    Author : Rabia Dogan; [2013]
    Keywords : Resistive RAM RRAM ; Static RAM SRAM ; Non-volatile memory NVM ; Coarse Grained Reconfigurable Array CGRA ;

    Abstract : Recently an effective usage of the chip area plays an essential role for System-on-Chip (SOC) designs. Nowadays on-chip memories take up more than 50%of the total die-area and are responsible for more than 40% of the total energy consumption. Cache memory alone occupies 30% of the on-chip area in the latest microprocessors. READ MORE