Essays about: "Spin-Orbit Coupling"

Showing result 1 - 5 of 16 essays containing the words Spin-Orbit Coupling.

1. 1. Characterization of Bi-incorporated InSb(111)A/B Surfaces : An STM and XPS Study

   University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

   Author : Shengpeng Huang; [2023]
   Keywords : indium antimonide; surface reconstructions; bismuth deposition; scanning tunneling microscopy; X-ray photoelectron spectroscopy.; Physics and Astronomy;

   Abstract : In recent years, III-V semiconductor materials have received increasing attention due to their admirable electronic properties like direct tunable bandgaps and high charge carrier mobility. Indium Antimonide (InSb) possesses the largest electron mobility among III-V materials and is promising for infrared detectors, high-speed field effect transistors, and spintronics. READ MORE

3. 2. Influence of The Heavy Atom Effect on The Cage Escape Yields of Iron(III)-Photosensitizers with N-Heterocyclic Carbene Ligands

   University essay from Uppsala universitet/Fysikalisk kemi

   Author : Johannes Wega; [2022]
   Keywords : ;

   Abstract : The recent emergence of earth-abundant iron(III)-photosensitizers with N-heterocyclic carbene ligands, exhibiting nanosecond ligand-to-metal charge-transfer states with suitable redox potentials to activate a broad range of substances, offers the possibility to convert sunlight into chemical substances, such as fuels or pharmaceuticals, in an environmentally friendly way. These complexes, however, often suffer from low yields of charge-separated products escaping the solvent cage, making such applications inherently inefficient. READ MORE

4. 3. Exploring Spin-Transport in Graphene

   University essay from Uppsala universitet/Energimaterialens fysik

   Author : Giacomo Luani; [2021]
   Keywords : ;

   Abstract : Graphene is one of the most popular new materials both in the academic and private sectors. Its striking properties allow for radical redesigns of many electronic or storage devices. In this report, first, a brief theoretical description of graphene’s band structure is given using the tight/binding method, along with its unique properties. READ MORE

5. 4. Characterization of InAs-Al semiconductor-superconductor hybrid devices

   University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Author : Markus Aspegren; [2020]
   Keywords : quantum dot; superconductivity; quantum transport; josephson junction; spectroscopy; yu-shiba-rusinov; hybrid devices; sub-gap states; quantum computer; majorana bound state; bogoliubov quasiparticle; Physics and Astronomy;

   Abstract : In this thesis we study charge and spin transport through InAs-Al nanowire superconductor-semiconductor hybrid devices. We focus on assessing the quality of the InAs-Al contact interface when using a weak HCl acid to wet-etch the nanowire surface prior to metal evaporation. READ MORE

6. 5. Gap properties of helical edge states in two-dimensional topological insulators with time-dependent magnetic impurities

   University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Author : Simon Wozny; [2020]
   Keywords : topological insulators; edge states; impurities; density of states; Green s function; Floquet; Physics and Astronomy;

   Abstract : The quantum mechanical equivalent of the classical Hall effect can lead to interesting results in solid state physics. A similar effect, that has received attention in recent years, occurs when large spin-orbit coupling is present in a material, the so-called quantum-spin Hall effect. READ MORE