Essays about: "TCAD"

Found 4 essays containing the word TCAD.

  1. 1. A Simulation Study of Variability in Gate-all-Around Nanosheet Transistors

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Virinchi Tirumaladass; [2022]
    Keywords : Gate-all-around; Nanosheet field effect transistors; process variations; variability; TCAD; Gate-all-around; Nanoblad fälteffekttransistorer; processvariationer; variabilitet; TCAD;

    Abstract : Gate-all-around (GAA) nanosheet field effect transistors (NSFETs) seem to be one of the most promising replacement options for FinFETs towards scaling down below to the sub-7nm technology nodes. They offer better electrostatics and control of short channel effects (SCEs) due to their superior control over the channel and their large effective channel width. READ MORE

  3. 2. Numerical Simulation of 3.3 kV–10 kV Silicon Carbide Super Junction-MOSFETs for High Power Electronic Applications

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Rishi Balasubramanian Saraswathy; [2022]
    Keywords : Super–Junction; DMOSFET; 4H-SiC; Silicon Carbide; Wide bandgap; 6.5 kV; 10 kV; On-state resistance; Breakdown voltage; Super–Junction; DMOSFET; 4H-SiC; kiselkarbid; bredbandgap; 6.5 kV; 10 kV; framspänningsfall; spärrspänning;

    Abstract : The thesis focuses on designing and characterizing SiC 3.3 kV Diffused Metal-Oxide Semiconductor Field-Effect Transistor (DMOSFET)s with a Ron that is significantly lower than that of current commercial devices. The On-state resistance and breakdown voltage are then adjusted by adding a Super-Junction structure. READ MORE

  4. 3. Performance estimation and Variability from Random Dopant Fluctuations in Multi-Gate Field Effect Transistors : a Simulation Study

    University essay from KTH/Integrerade komponenter och kretsar

    Author : Gabriele Tocci; [2010]
    Keywords : ;

    Abstract : As the formation of nearly abrupt p-n junctions in aggressively scaled transistors has become a complex task, a novel type of device in which there are no junctions has recently been suggested (J. P. Colinge et al., Nature 2010). READ MORE

  5. 4. Large Signal Physical Simulations of Si LD-MOS transistor for RF application

    University essay from Institutionen för fysik, kemi och biologi

    Author : Asad Abbas Syed; [2004]
    Keywords : Physics; Si-LDMOS; TCAD-Simulation; Large Signal; RF power transistor; Fysik;

    Abstract : The development of computer aided design tools for devices and circuits has increased the interest for accurate transistor modeling in microwave applications. In the increasingly expanding wireless communication market, there is a huge demand for high performance RF power devices. READ MORE