Advanced search

Found 3 essays matching the above criteria.

  1. 1. Flashlamp Annealing for Improved Ferroelectric Junctions

    University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Theodor Blom; [2023]
    Keywords : Flashlamp annealing; ferroelectricity; hafnia oxide; III-V semiconductor; thermal annealing; device performance; Technology and Engineering;

    Abstract : The effects of flashlamp annealing (FLA) on the quality of ferroelectric HfxZr1–xO2 (HZO) interfaces, integrated on InAs substrates, are evaluated. For the integration of ferroelectric HZO on III-V semiconductors the crystallization via rapid thermal processing (RTP) can severely degrade the HZO/III-V interface. READ MORE

  2. 2. Fabrication of Tunneling Field Effect Transistors (TFETs) and the study of graphene

    University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Author : Carlos Nunez Lobato; [2018]
    Keywords : graphene; semiconductor; exfoliation; boron nitride; Physics and Astronomy;

    Abstract : After the discovery of graphene in 2004, a single layer of graphite, the assembly of 2D materials became a promising research area in solid state Physics. This thesis explores fabrication of 2D-heterostructures that aim to probe into graphene’s electronic structure with the Tunneling Field Effect Transistor (TFET). READ MORE

  3. 3. Low-Frequency Noise in TFETs

    University essay from Lunds universitet/Fysiska institutionen

    Author : Markus Hellenbrand; [2015]
    Keywords : Tunnel Field-Effect Transistor; Steep-Slope Devices; III-V; InAs; GaSb; Broken Band Gap; Physics and Astronomy;

    Abstract : Nanowire tunnel field-effect transistors (TFETs) were investigated by carrying out noise measurements and low-temperature DC measurements. The TFET tunnelling junction was realised by a GaSb/InAs heterojunction resulting in a broken band gap. TFET noise currents were measured at frequencies between 10 Hz and 1 kHz. READ MORE