Essays about: "band gap"

Showing result 1 - 5 of 95 essays containing the words band gap.

  1. 1. Time-based Key for Coverless Audio Steganography: A Proposed Behavioral Method to Increase Capacity

    University essay from Blekinge Tekniska Högskola/Institutionen för datavetenskap

    Author : John Alanko Öberg; Carl Svensson; [2023]
    Keywords : Coverless audio steganography; information hiding; covert communication; effective capacity; behavioral; Täcklös ljudsteganografi; informationsdöljning; hemlig kommunikation; effektiv kapacitet; beteendemässig;

    Abstract : Background. Coverless steganography is a relatively unexplored area of steganography where the message is not embedded into a cover media. Instead the message is derived from one or several properties already existing in the carrier media. This renders steganalysis methods used for traditional steganography useless. READ MORE

  3. 2. AC Gate Bias Stress of 4H-SiC MOSFETs : An investigation into threshold voltage instability of SiC Power MOSFETs under the influence of bipolar gate stress

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Agnimitra Saha; [2023]
    Keywords : Silicon Carbide; Gate Bias Stress; Threshold Voltage; On-state Resistance; Temperature; kiselkarbid; gate spännings-stress; tröskelspänning; on-resistansen; temperatur;

    Abstract : Silicon Carbide, a wide band gap (WBG) semiconductor, has pushed electrical limits beyond Silicon (Si) when it comes to power electronics. It has offered the electrification of society showing promise for a greener future. READ MORE

  4. 3. Towards a setup for narrowband terahertz generation through difference-frequency mixing of chirped ultrashort pulses

    University essay from Lunds universitet/Atomfysik; Lunds universitet/Fysiska institutionen

    Author : Isa Clementsson; [2023]
    Keywords : Physics and Astronomy;

    Abstract : Terahertz radiation is a useful tool for inducing lower-energy excitations in matter, where it can be used to cause structural changes through direct interaction with the crystal lattice. Sub-picosecond optical pulses can be used to generate intense broadband terahertz pulses through optical rectification in nonlinear crystals, reaching peak electric fields of several MV/m and conversion efficiencies as high as a few percent. READ MORE

  5. 4. Radiation Effects on GaN-based HEMTs for RF and Power Electronic Applications

    University essay from KTH/Tillämpad fysik

    Author : Wilhelm Holmberg; [2023]
    Keywords : High Electron Mobility Transistor; HEMT; Gallium Nitride; GaN; Silicon Carbide; SiC; Proton Radiation; Galliumnitrid; GaN; Kiselkarbid; SiC; Kisel; Si; HEMT; Transistor; Protonstrålning;

    Abstract : GaN-HEMTs (Gallium Nitride-based High Electron Mobility Transistors) have, thanks to the large band gap of GaN, electrical properties that are suitable for applications of high electrical voltages, high currents, and fast switching. The large band gap also gives GaN-HEMTs a high resistance to radiation. READ MORE

  6. 5. Quantum Transport in Topological Insulator Nanowires

    University essay from KTH/Fysik

    Author : Sergi Pradas Rodriguez; [2023]
    Keywords : quantum transport; topological insulators; nanowires; numerical analysis; Kwant; etc.; kvanttransport; topologiska isolatorer; nanotrådar; numerisk analys; Kvant; etc.;

    Abstract : Three-dimensional topological insulators are materials that have a bulk band gap like a traditional insulator, but which hold topologically protected conducting surface states. In this thesis we present a numerical analysis of the surface states of topological insulator nanowires in the tight-binding approximation. READ MORE