Essays about: "charge carrier transport"

Showing result 1 - 5 of 9 essays containing the words charge carrier transport.

  1. 1. Carrier selection from a 3PL perspective A case study of Kuehne + Nagel alliances with carriers in Sweden

    University essay from Göteborgs universitet/Graduate School

    Author : Aline Novaes Telles de Amorim; [2018-07-02]
    Keywords : Third-party logistics; carrier selection; carrier choice; coopetition; alliance;

    Abstract : MSc in Logistics and Transport Management.... READ MORE

  2. 2. Electrical and Optical Characterization of InAsP/InP Nanowire-Based Avalanche Photodetectors

    University essay from Högskolan i Halmstad/Fotonik; Högskolan i Halmstad/Fotonik

    Author : Praveen Kumar Singaravelu; Tawhidul Alam Mohammad; [2016]
    Keywords : ;

    Abstract : The availability of new manufacturing methodology in solid state physics makes it possible to grow nano-photonic devices for better performance and unique properties. In this thesis work, we use I-V and FTIR spectroscopy to study the electrical and optical properties of InAsP/InP nanowire-based array avalanche photodetectors for near infrared applications. READ MORE

  3. 3. Vertical heterostructure III-V nanowire MOSFETs

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Adam Jönsson; [2016]
    Keywords : MOSFET; transistor; heterostructure; III-V; RF; semiconductor; silicon; fabrication; electronics; Technology and Engineering;

    Abstract : If cars had developed as fast as processors they would go at 470,000 mph, get 100,000 miles to the gallon, and cost 3 cents" claims Paul Ottelini, Intel CEO 2005-2013. This serves as a reminder of how fast the field of nanoelectronics is developing due to constant demand for faster and more energy efficient integrated circuits. READ MORE

  4. 4. Hall Measurement on Regrown Nanowires

    University essay from Lunds universitet/Fysiska institutionen

    Author : Sudhakar Sivakumar; [2015]
    Keywords : Hall measurement; InGaAs; III-V semiconductor; ballistic; transport properties; mobility; sheet carrier concentration; Physics and Astronomy;

    Abstract : Ternary semiconductor alloys like $In_xGa_{1-x}As$ have lured competing attention in connection to sub-50 nm high performance, low power, planar Complementary Metal Oxide Semiconductor technology. This compound semiconductor owes its popularity to excellent bulk carrier mobility, minority carrier diffusion constant, small bandgap, high electron injection velocity and its capability to take Moore's law beyond silicon platform. READ MORE

  5. 5. Numerical Simulations of Device Scaling of a Pseudomorphic InP HEMT

    University essay from Chalmers tekniska högskola/GigaHertz Centrum

    Author : Marcus Ahlstrand; [2014]
    Keywords : ;

    Abstract : A Technology CAD (TCAD) model of a pseudomorphic indium phosphide high electron mobility transistor (HEMT) optimized for cryogenic operation has been developed. The model has been used to investigate the prospects of improving the radio frequency performance of the device by means of device scaling, specifically through the scaling of the gate length and the distance between the gate electrode and the channel. READ MORE