Essays about: "electron phonon"
Showing result 1 - 5 of 11 essays containing the words electron phonon.
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1. First principles investigation of the thermal conductivity of Zr, ZrC, and ZrN
University essay from KTH/FysikAbstract : The thermal conductivity and electrical resistivity of Zr, ZrC, and ZrN were calculated using first-principles density functional theory (DFT) and the Boltzmann transport equation. The electron-phonon scattering was modeled via the self-energy relaxation time approximation (SERTA), and the phonon-phonon scattering via the analogous single-mode relaxation time approximation (SMRTA). READ MORE
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2. Study on the Electronic Band Structure of the Spinel Superconductor LiTi2O4
University essay from KTH/Tillämpad fysikAbstract : This master’s thesis focuses on investigating the electronic properties of the superconducting spinel compound LiTi2O4 by means of computational and experimental effort. The title compound has been extensively studied in the past years, being the only known superconducting spinel oxide with relatively high Tc = 11.5 K. READ MORE
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3. Quantum thermodynamics explorations with a Hubbard-Holstein dimer
University essay from Lunds universitet/Matematisk fysik; Lunds universitet/Fysiska institutionenAbstract : The goal of this project is to characterize the quantum thermodynamics of a Hubbard-Holstein dimer. We explore how the standard formalism of quantum thermodynamics behaves in the context many-body physics. READ MORE
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4. Charge transport in a Hubbard-Holstein junction: Preliminary results from a DFT approach.
University essay from Lunds universitet/Matematisk fysik; Lunds universitet/Fysiska institutionenAbstract : Many-body systems are extremely complicated to describe due to mutual interactions between the constituent particles. This is for example the case of systems with electron-electron (e-e) and electron-phonon (e-ph) interactions. READ MORE
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5. Low-Frequency Noise in InGaAs Nanowire MOSFETs
University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionenAbstract : Low-frequency (LF) noise (1/f as well as random telegraph-signal (RTS) noise) measurements were performed on high-performance InGaAs nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs). 1/f noise measurements at room temperature (RT) show that the dominant noise mechanism is carrier number fluctuations. READ MORE