Advanced search
Showing result 1 - 5 of 79 essays matching the above criteria.
-
1. Real- and Quasi-Atomic Layer Etching for Ultra-High Resolution Patterning
University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionenAbstract : An attempt was made at developing atomic layer etching from a cyclic etching process in an ICP-RIE tool. During the process OES was used for contamination monitoring and estimation of the relative amount of Cl2 left in the chamber during the etch step of cyclic etching processes. READ MORE
-
2. Influence from temperature variations in stacking fault energy on the mechanical properties of stainless steels
University essay from KTH/MaterialvetenskapAbstract : This paper investigates the mechanical properties and deformation mechanisms of austenitic stainless steels and how they relate to the material property of stacking fault energy (SFE) and its relation to temperature and nickel content. Austenitic stainless steels are commonly used and well known for good mechanical properties and deformation characteristics. READ MORE
-
3. Heteroepitaxial Growth of GaN Film on Si substrate by Magnetron Sputtering
University essay from Linköpings universitet/Institutionen för fysik, kemi och biologiAbstract : In this study, the effect of AlN buffer layer structure and morphology on the GaN films deposited on Si (111) substrate by reactive DC magnetron sputtering have been studied. For structural and morphological characterization X-ray diffraction (XRD) and Scanning electron microscope (SEM) were used. READ MORE
-
4. Developing an Ar milling process to improve the contact quality to InAs nanowires
University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysikAbstract : The aim of this work was to develop a stable and reproducible argon milling process for InAs nanowires to remove the native oxide layer that increases electrical resistance. This was done by identifying a few milling parameters and studying them in relation to the milling rate of silicon dioxide (SiO2). READ MORE
-
5. Damage Analysis of Reactive Ion and Atomic Layer Etched Silicon
University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionenAbstract : Dry etching is one of the most important methods of pattern transfer in nanofabrication. There are many dry etching methods, the most commonly used is reactive ion etching (RIE), that is based on a continuous supply of reactive ions and radicals generated in a radio-frequency (RF) plasma discharge. READ MORE
