Essays about: "ferroelectricity"

Showing result 1 - 5 of 6 essays containing the word ferroelectricity.

1. 1. Structural analysis of HZO thin film and electrode using X-ray diffraction

   University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

   Author : Elliot Winsnes; [2024]
   Keywords : HZO; hafnia; hafnium dioxide; zirconium dioxide; ferroelectricity; ferroelectric; synchrotron radiation; X-ray diffraction; Physics and Astronomy;

   Abstract : Since its discovery in 2011, the ferroelectricity of thin films based on HfO2 has been studied intensively. In particular, thin films with a 1:1 ratio of HfO2 and ZrO2 (HZO) has been of great interest. The ferroelectricity arises from a non-centrosymmetric orthorhombic (o) phase of HZO whose prevalence is dependent on the processing conditions. READ MORE

3. 2. Flashlamp Annealing for Improved Ferroelectric Junctions

   University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Theodor Blom; [2023]
   Keywords : Flashlamp annealing; ferroelectricity; hafnia oxide; III-V semiconductor; thermal annealing; device performance; Technology and Engineering;

   Abstract : The effects of flashlamp annealing (FLA) on the quality of ferroelectric HfxZr1–xO2 (HZO) interfaces, integrated on InAs substrates, are evaluated. For the integration of ferroelectric HZO on III-V semiconductors the crystallization via rapid thermal processing (RTP) can severely degrade the HZO/III-V interface. READ MORE

4. 3. Laminated HZO on InAs: A study of as-deposited ferroelectricity

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : André Andersen; [2022]
   Keywords : Ferroelectricity; HZO; InAs; III V; As-deposited ferroelectricity; BEOL; Nanoelectronics; Nanoprocessing; Nanotechnology; ALD; MOSCAP; Memory Technology; Technology and Engineering;

   Abstract : As the limits of transistor feature size scaling is reaching its saturation, new innovations are needed to prevent performance loss. High performance transistors on the III/V semiconductor platform implemented with ferroelectric oxides might in the future satisfy this demand. READ MORE

5. 4. Growth and Characterization of Ferroelectric Lanthanum-Doped Hafnia

   University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Author : Harald Havir; [2020]
   Keywords : Ferroelectricity; Lanthanum-doped Hafnia; ALD; Science General;

   Abstract : Hafnia-based ferroelectrics show great promise as future nonvolatile memory devices, however, their issues regarding device inconsistency across their lifetime, coupled with the relatively short total lifetime, makes these devices only theoretical as of now. In this thesis, an ALD deposition recipe for lanthanum oxide deposition was created. READ MORE

6. 5. Development of Ferroelectric Hafnium Oxide for Negative Capacitance Field Effect Transistors

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Robin Atle; [2019]
   Keywords : Un-doped ferroelectricity; HfO2; Hafnium oxide; ALD; Atomic Layer Deposition; Hysteresis; P-E; polarization; Technology and Engineering;

   Abstract : With the transistor being the workhorse in modern electronics it has been vastly improved since its invention. However, the previous go-to improvement method of scaling it down has reached a dead end. Power dissipation has become a large concern and is in need of a solution. READ MORE