Essays about: "hfo2"

Showing result 1 - 5 of 12 essays containing the word hfo2.

1. 1. Structural analysis of HZO thin film and electrode using X-ray diffraction

   University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

   Author : Elliot Winsnes; [2024]
   Keywords : HZO; hafnia; hafnium dioxide; zirconium dioxide; ferroelectricity; ferroelectric; synchrotron radiation; X-ray diffraction; Physics and Astronomy;

   Abstract : Since its discovery in 2011, the ferroelectricity of thin films based on HfO2 has been studied intensively. In particular, thin films with a 1:1 ratio of HfO2 and ZrO2 (HZO) has been of great interest. The ferroelectricity arises from a non-centrosymmetric orthorhombic (o) phase of HZO whose prevalence is dependent on the processing conditions. READ MORE

3. 2. Investigating and Fabricating High-K (Al2O3) and Ferroelectric (HfO2) MIM-Capacitors for use in BEOL Fabrication Applications

   University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Author : Thomas Hackett; [2021]
   Keywords : atomic layer deposition ALD ; ferroelectric; metal-insulator-metal MIM capacitors; low thermal budget; rapid thermal annealing RTA ;

   Abstract : Integration of high-K Metal-Insulator-Metal (MIM) capacitors in the Back-end-of-line (BEOL) is a topic of interest for the further development of the process at KTH Royal Institute of Technology. MIM-capacitors benefit from having constant capacitance values over a range of voltages and/or frequencies. READ MORE

4. 3. HfO2 and ITO Resistive Random-Access Memory

   University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

   Author : Mattias Åstrand; [2020]
   Keywords : RRAM; Resistive switching; HfO2; ITO; Physics and Astronomy;

   Abstract : The purpose of this work is of evaluating the choice of HfO2 and ITO as the dielectric and the top electrode in high performance resistive random-access memory (RRAM), respectively. The study is twofold, as it quantifies performance according to standard figures of merit for this technology, as well as provides insight into the physics of current conduction for this material choice. READ MORE

5. 4. Development of Ferroelectric Hafnium Oxide for Negative Capacitance Field Effect Transistors

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Robin Atle; [2019]
   Keywords : Un-doped ferroelectricity; HfO2; Hafnium oxide; ALD; Atomic Layer Deposition; Hysteresis; P-E; polarization; Technology and Engineering;

   Abstract : With the transistor being the workhorse in modern electronics it has been vastly improved since its invention. However, the previous go-to improvement method of scaling it down has reached a dead end. Power dissipation has become a large concern and is in need of a solution. READ MORE

6. 5. Advanced rear contact design for CIGS solar cells

   University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Author : Jorge Alexandre De Abreu Mafalda; [2019]
   Keywords : CIGS; HfO2; surface passivation; alkali treatment; point contact openings; SCAPS;

   Abstract : The current trend concerning the thinning of solar cell devices is mainly motivated by economic aspects, such as the cost of the used rare-earth elements, and by the requirements of emergent technologies. The introduction of ultra-thin absorber layers results in a reduction of used materials and thus contributes to a more cost-effective and time-efficient production process. READ MORE