Essays about: "high electron mobility transistor HEMT"

Showing result 1 - 5 of 7 essays containing the words high electron mobility transistor HEMT.

1. 1. Off-State Stress Effects in AlGaN/GaN HEMTs : Investigation of high-voltage off-state stress impact on performance of and its retention in hybrid-drain ohmic gate AlGaN/GaN HEMTs

   University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Author : Ivan Krsic; [2023]
   Keywords : HEMT; GaN; off-state stress; memory effects; drain leakage current; dynamic RDSon; threshold voltage instabilities; charge redistribution; HEMT; GaN; stress i avslaget tillstånd; minneseffekter; läckströmmen; dynamisk RDSon; instabiliteten hos styrets tröskelspänning; omfördelningen av laddningar;

   Abstract : High electron mobility transistors (HEMTs) realized using AlxGa1-xN/GaN are relatively new technology which is prominent for high-speed and high-power applications. Some of the main problems with this technology were identified as dynamic RDSon, current collapse and threshold voltage instabilities due to the off-state stress. READ MORE

3. 2. Superconducting gates for InP HEMTs

   University essay from KTH/Tillämpad fysik

   Author : Sebastian Alveteg; [2023]
   Keywords : Cryogenic electronics; HEMT; Superconductors; Applied Physics; Kryogenisk elektronik; HEMT; Supraledare; Tillämpad fysik;

   Abstract : The thesis examines the prospects of using the superconductor NbN as the gatemetal for an InP HEMT. A HEMT or High Electron Mobility Transistor is aheterostructure transistor engineered to reach very high electron mobility. InPHEMTs are used as cryogenic Low Noise Amplifiers (LNAs), which have increasedin demand as quantum computing is scaling up. READ MORE

4. 3. Radiation Effects on GaN-based HEMTs for RF and Power Electronic Applications

   University essay from KTH/Tillämpad fysik

   Author : Wilhelm Holmberg; [2023]
   Keywords : High Electron Mobility Transistor; HEMT; Gallium Nitride; GaN; Silicon Carbide; SiC; Proton Radiation; Galliumnitrid; GaN; Kiselkarbid; SiC; Kisel; Si; HEMT; Transistor; Protonstrålning;

   Abstract : GaN-HEMTs (Gallium Nitride-based High Electron Mobility Transistors) have, thanks to the large band gap of GaN, electrical properties that are suitable for applications of high electrical voltages, high currents, and fast switching. The large band gap also gives GaN-HEMTs a high resistance to radiation. READ MORE

5. 4. Characterisation of GaN HEMTs on Different Substrates for Power Electronics Applications

   University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Author : Hithiksha Krishna Murthy; [2022]
   Keywords : Gallium nitrate; High Mobility Electron Transistor; Silicon carbide; Silicon; Sapphire; substrates; power electronics;

   Abstract : GaN-based High Electron Mobility Transistors (HEMT) are appealing because of their large breakdown field, high saturation velocity, and superior thermal conductivity. They work at high temperature without much degradation. HEMTs have a few drawbacks despite many positives. The cost of developing GaN HEMTs on a native substrate is high. READ MORE

6. 5. Characterization of GaNbased HEMTs for power electronics

   University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Author : Xiaomin Liang; [2020]
   Keywords : Gallium nitride; high electron mobility transistor; gate designs; power electronics;

   Abstract : Gallium nitride (GaN) based high electron mobility transistors (HEMTs) are promising for power electronic applications due to their high breakdown voltage and power efficiency compared to Si-based power devices. As known, the design of the HEMT has high impact on the performance of the devices. READ MORE