Essays about: "indium arsenide 111 B"

Found 3 essays containing the words indium arsenide 111 B.

1. 1. Polymer Assisted Transfer of Graphene onto Semiconductor Substrates

   University essay from Lunds universitet/Förbränningsfysik; Lunds universitet/Synkrotronljusfysik

   Author : Jonathan Frisby; [2020]
   Keywords : Physics and Astronomy;

   Abstract : Since first being isolated in 2004, Graphene has been researched heavily because of its unique properties. Recently, interest has grown in graphene/semiconductor heterostructures. In this work, the transfer of graphene through the use of cellulose acetate butyrate (CAB) polymer is studied. READ MORE

3. 2. The STM Study of Bi Adsorption on the InAs(111)B Surface

   University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

   Author : Jung-Ching Liu; [2019]
   Keywords : bismuth; indium arsenide 111 B; adsorption; surface; scanning tunneling microscopy; Physics and Astronomy;

   Abstract : Semiconductors composed of group III and group V elements have a variety of promising applications, such as topological insulators and quantum computers. Among this category of semiconductors, bismuth (Bi)-containing III-V compounds are able to make these applications possible. READ MORE

4. 3. Using gallium nitride nanowires as STM probes

   University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

   Author : Karolis Sulinskas; [2018]
   Keywords : STM; STS; Nanowire; GaN; InAs; Semiconductors; Physics and Astronomy;

   Abstract : Gallium nitride (GaN) nanowires grown using catalyst-free metal organic vapor phase epitaxy were used as scanning tunneling microscope (STM) probes. The probes were prepared by placing a GaN nanowire on a tungsten STM probe using a nanomanipulator in a scanning electron microscope (SEM) and welding them together using an electron beam induced platinum deposition. READ MORE