Advanced search

Found 3 essays matching the above criteria.

  1. 1. Superconducting gates for InP HEMTs

    University essay from KTH/Tillämpad fysik

    Author : Sebastian Alveteg; [2023]
    Keywords : Cryogenic electronics; HEMT; Superconductors; Applied Physics; Kryogenisk elektronik; HEMT; Supraledare; Tillämpad fysik;

    Abstract : The thesis examines the prospects of using the superconductor NbN as the gatemetal for an InP HEMT. A HEMT or High Electron Mobility Transistor is aheterostructure transistor engineered to reach very high electron mobility. InPHEMTs are used as cryogenic Low Noise Amplifiers (LNAs), which have increasedin demand as quantum computing is scaling up. READ MORE

  3. 2. Niobium Ohmic Contacts for Cryogenic Indium Phosphide High-Electron-Mobility Transistors

    University essay from KTH/Tillämpad fysik

    Author : Linnéa Bendrot; [2022]
    Keywords : Ohmic contacts; high-electron-mobility transistor; InP; Nb films; cryogenic electronics; low-noise amplifier; quantum computing; transfer length method; superconductivity; contact barrier resistance; Ohmska kontakter; högelektronmobilitetstransistorer; indiumfosfid; niob; tunnfilm; kryogen elektronik; lågbrusförstärkare; kvantdatorer; Transfer Length-metod; supraledning; kontakt- barriärresistans;

    Abstract : Ohmic contacts are crucial components in semiconductor devices such as transistors and diodes, and lowering their contact resistance is an important factor in device performance enhancement. This is especially important for low-noise amplifiers (LNAs) where device noise temperature decreases both directly and indirectly with decreasing contact resistance. READ MORE

  4. 3. Design of microwave low-noise amplifiers in a SiGe BiCMOS process

    University essay from Institutionen för systemteknik

    Author : Martin Hansson; [2003]
    Keywords : Electronics; LNA; low-noise; amplifiers; SiGe; BiCMOS; microwave; MMIC; RFIC; Elektronik;

    Abstract : In this thesis, three different types of low-noise amplifiers (LNA’s) have been designed using a 0.25 mm SiGe BiCMOS process. Firstly, a single-stage amplifier has been designed with 11 dB gain and 3.7 dB noise figure at 8 GHz. READ MORE