Essays about: "nano electronics"

Showing result 1 - 5 of 19 essays containing the words nano electronics.

  1. 1. Investigation of Resistive Random Access Memory for 1T1R Nanowire Array Integration

    University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Author : Orestes Theodoridis; [2020]
    Keywords : RRAM; Nanowire; Memory Technology; Nanoelectronics; Nanoscience; Physics and Astronomy;

    Abstract : As modern electronics have started to reach its physical scaling limits, novel architectures and physics is needed to meet future demands. Oxide-based Resistive Random Access Memory (RRAM) is a new emerging technology that uses filament formation and rupture in thin oxides to generate resistive switching. READ MORE

  3. 2. HfO2 and ITO Resistive Random-Access Memory

    University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Author : Mattias Åstrand; [2020]
    Keywords : RRAM; Resistive switching; HfO2; ITO; Physics and Astronomy;

    Abstract : The purpose of this work is of evaluating the choice of HfO2 and ITO as the dielectric and the top electrode in high performance resistive random-access memory (RRAM), respectively. The study is twofold, as it quantifies performance according to standard figures of merit for this technology, as well as provides insight into the physics of current conduction for this material choice. READ MORE

  4. 3. Passivation of Gallium Arsenide Nanowires for Solar Cells

    University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Author : Austin Irish; [2019]
    Keywords : nanowires; semiconductors; solar cells; photovoltaics; passivation; electronics; chemistry; polymers; hydrazine; plasma; gallium; arsenic; iii-v; epitaxy; photoluminescence; time-resolved; spectroscopy; Physics and Astronomy;

    Abstract : A strategic and diverse set of passivation methods for gallium arsenide nanowires wasstudied. Using a time-resolved photoluminescence setup at100 Kand300 K, the radiativerecombination of charge carriers was resolved on a picosecond time scale. READ MORE

  5. 4. Importance of atomic force microscopy settings for measuring the diameter of carbon nanotubes

    University essay from Karlstads universitet/Institutionen för ingenjörsvetenskap och fysik (from 2013)

    Author : Anton Almén; [2019]
    Keywords : Carbon nanotubes CNTs ; Atomic force microscopy AFM ; diameter; height; tapping; frequency; phase; amplitude; setpoint; Kolnanorör; Atomkraftsmikroskopi AFM ; diameter; höjd; svängning; frekvens; fas; amplitud; börvärde;

    Abstract : Carbon nanotubes (CNTs) have gathered a lot of interest because of their extraordinary mechanical, electrical and thermal properties and have potential applications in a wide variety of areas such as material-reinforcement and nano-electronics. The properties of nanotubes are dependent on their diameter and methods for determining this using atomic force microscopy (AFM) in tapping mode assume that the measured height of the tubes represent the real diameter. READ MORE

  6. 5. Development of III-V RF Nanowire MOSFETs

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Josefine Rost; Anna Wagnström; [2018]
    Keywords : Nanowire MOSFET; RF; COMSOL Multiphysics; Semiconductor processing; III-V Materials; Technology and Engineering;

    Abstract : The silicon MOSFET is one of the most important components used in modern electronics. The pursuit to continue fulfilling Moore’s law by scaling transistors to even smaller sizes have driven the development forward for CMOS technologies and new approaches have been necessary. READ MORE