Essays about: "noise gate"
Showing result 1 - 5 of 27 essays containing the words noise gate.
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1. Superconducting gates for InP HEMTs
University essay from KTH/Tillämpad fysikAbstract : The thesis examines the prospects of using the superconductor NbN as the gatemetal for an InP HEMT. A HEMT or High Electron Mobility Transistor is aheterostructure transistor engineered to reach very high electron mobility. InPHEMTs are used as cryogenic Low Noise Amplifiers (LNAs), which have increasedin demand as quantum computing is scaling up. READ MORE
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2. Quantum Reinforcement Learning for Sensor-Assisted Robot Navigation Tasks
University essay from Lunds universitet/Fysiska institutionenAbstract : Quantum computing has advanced rapidly throughout the past decade, both from a hardware and software point of view. A variety of algorithms have been developed that are suitable for the current generation of quantum devices, which are referred to as noisy intermediate-scale quantum devices. READ MORE
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3. Hardware in Loop Simulations of Electric Drives
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : Electric drives are crucial components of powertrain of modern vehicles. They need to be controlled effectively to deliver a comfortable and efficient driving experience. The control unit needs to be robust to handle extreme operating conditions and faults in a safe manner. READ MORE
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4. 3D printer in dosimetry and mammography – designing and testing an OSL dosemeter holder and a low contrast-detail phantom
University essay from Lunds universitet/SjukhusfysikerutbildningenAbstract : Introduction: Today, 3D printing is a versatile tool used in a wide range of fields. With the advent of more cost-effective fused deposition modelling (FDM) 3D printing technologies it is time to investi- gate what such a 3D printer has to offer in radiation science applications. READ MORE
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5. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). READ MORE