Essays about: "parasitic elements"

Showing result 1 - 5 of 11 essays containing the words parasitic elements.

  1. 1. Decay Chains of Fast Alpha Emitters in the Actinide Region

    University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Partikel- och kärnfysik

    Author : Tanvir Sayed; [2024]
    Keywords : alpha decay; alpha emissions; fine structure; decay chain; decay scheme; alpha spectrometry; actinide; nucleus; nuclear structure; nuclear states; energy levels; uranium isotopes; U310 experiment; parasitic runs; decay station; TASISpec ; moving window deconvolution; digitisers; alpha-gamma coincidence; 221-Th decay; fine structure of alpha decay to 217-Ra; GSI; Gamow s theory; Geiger-Nuttall; chain search; short half-lives; Physics and Astronomy;

    Abstract : With the advent of increasingly advanced spectroscopic instruments after the turn of the century, it has become accessible to unravel the structure of instantly ‘vanishing’ nuclei, with lifetimes as short as 1 μs, and responsible for pile-up events in analog electronics. Experimental data has been recorded by the Nuclear Structure Group at Lund University for 48Ca/50Ti + nat. READ MORE

  3. 2. Gate Drive Design for SiC MOSFET Device Characterization : Investigation into the impact of the gate inductance and resistance on the switching behaviour of SiC Power MOSFETs

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Elochukwu Mbah; [2023]
    Keywords : Silicon Carbide Power MOSFET; Gate Inductance; Gate Resistance; Miller Period; dv dt and di dt transients; Double Pulse Test; Kiselkarbid Power MOSFET; Gateinduktans; Gate Resistance; Millerperioden; dv dt och di dt transienter; Dubbelpulstest.;

    Abstract : Silicon Carbide as a wide-bandgap semiconductor has several physical and electrical advantages over Silicon for high voltage and high frequency applications. SiC as a MOSFET device has a lot of great characteristics like lower on-resistance and low input capacitances. READ MORE

  4. 3. Configurable, scalable single-ended sense amplifier with additional auxiliary blocks for low-power two-port memories in advanced FinFET technologies

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Limitha Subbaiah Kumar Nangaru; [2022]
    Keywords : CMOS Complementary Metal Oxide Semiconductors ; DRC Design Rule Check ; Process Corners; FinFET Fin Field Effect Transistor ; IC Integrated Circuit ; LVS Layout Versus Schematic ; Monte Carlo; Nominal Voltage; PDK Process Design Kit ; Power Delay Product; Read Bit Line; Read Word Line; SoC System on Chip ; SRAM Static Random Access Memory ; Threshold Voltage; Technology and Engineering;

    Abstract : System on Chip (SoC) designs contain a variety of Intellectual Property (IP) cores, including digital signal processing blocks, media and graphics processing units, as well as processing core units that employ multiple-port memories to enhance performance and bandwidth. These memories allow parallel read/write operations from the same memory blocks from different ports. READ MORE

  5. 4. Model verification and common mode current analysis of grid connected three phase two level converters

    University essay from Lunds universitet/Industriell elektroteknik och automation

    Author : Simon Lindvall; Richard Haraldsson; [2021]
    Keywords : active filter; EMC; EMI; converter; common mode; differential mode; shunt active filter; parasitic elements; Technology and Engineering;

    Abstract : In this Master’s thesis an in-depth model of a shunt active filter for high frequency analysis is constructed. The purpose is to enable analysis of higher frequency behavior reaching 1MHz. Using the high frequency model, common mode currents can be simulated. READ MORE

  6. 5. Epigenetic and transcriptional effects of full-length LINE-1 retrotransposons in human neural progenitor cells

    University essay from Lunds universitet/Examensarbeten i bioinformatik

    Author : Ninoslav Pandiloski; [2021]
    Keywords : Biology and Life Sciences;

    Abstract : Transposable elements (TE) are parasitic genetic entities that have the ability to alter their position within a genome and have the potential to influence its functionality. Although TEs play beneficial roles in the evolution of their host, they are active in various human disorders including neurological diseases, where may contribute to the progress of the disease. READ MORE