Essays about: "resistans"

Showing result 1 - 5 of 45 essays containing the word resistans.

  1. 1. Thermal degradation of PFAS in solid matter

    University essay from KTH/Kemi

    Author : Tuqa Al-Badri; [2024]
    Keywords : PFAS; PFOS; PFOA; thermal degradation; sewage sludge; PFAS; PFOS; PFOA; termisk nedbrytning; avloppsslam;

    Abstract : Per- och Polyfluorerade alkylsubstanser (PFAS) är syntetiskt framställda organiska föreningar som har använts i stor utsträckning i konsument- och industriprodukter. PFAS-substanser besitter attraktiva egenskaper såsom resistans mot väta, fett, fläckar och är dessutom värmetåliga. READ MORE

  3. 2. Off-State Stress Effects in AlGaN/GaN HEMTs : Investigation of high-voltage off-state stress impact on performance of and its retention in hybrid-drain ohmic gate AlGaN/GaN HEMTs

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Ivan Krsic; [2023]
    Keywords : HEMT; GaN; off-state stress; memory effects; drain leakage current; dynamic RDSon; threshold voltage instabilities; charge redistribution; HEMT; GaN; stress i avslaget tillstånd; minneseffekter; läckströmmen; dynamisk RDSon; instabiliteten hos styrets tröskelspänning; omfördelningen av laddningar;

    Abstract : High electron mobility transistors (HEMTs) realized using AlxGa1-xN/GaN are relatively new technology which is prominent for high-speed and high-power applications. Some of the main problems with this technology were identified as dynamic RDSon, current collapse and threshold voltage instabilities due to the off-state stress. READ MORE

  4. 3. Superconducting gates for InP HEMTs

    University essay from KTH/Tillämpad fysik

    Author : Sebastian Alveteg; [2023]
    Keywords : Cryogenic electronics; HEMT; Superconductors; Applied Physics; Kryogenisk elektronik; HEMT; Supraledare; Tillämpad fysik;

    Abstract : The thesis examines the prospects of using the superconductor NbN as the gatemetal for an InP HEMT. A HEMT or High Electron Mobility Transistor is aheterostructure transistor engineered to reach very high electron mobility. InPHEMTs are used as cryogenic Low Noise Amplifiers (LNAs), which have increasedin demand as quantum computing is scaling up. READ MORE

  5. 4. Numerical Tool for Thermal Analysis of Space Computers

    University essay from Uppsala universitet/Elektricitetslära

    Author : Baran Hamad; [2023]
    Keywords : thermal; space; thermal analysis; thermal design; space computer; heat transfer; PCB; lumped parameter; lumped element; thermal resistance; termisk; rymd; termisk analys; termisk design; rymddator; värmeöverföring; PCB; lumped parameter; lumped element; termisk resistans;

    Abstract : This master thesis addresses the development of an automatic numerical tool for thermal analysis, focusing on thermal systems comprising a printed circuit board assembly and cooling case structure. The project, conducted in collaboration with Unibap, aims to enhance the design process of space computer modules by automating middle steps between design software and thermal analysis results. READ MORE

  6. 5. Gate Drive Design for SiC MOSFET Device Characterization : Investigation into the impact of the gate inductance and resistance on the switching behaviour of SiC Power MOSFETs

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Elochukwu Mbah; [2023]
    Keywords : Silicon Carbide Power MOSFET; Gate Inductance; Gate Resistance; Miller Period; dv dt and di dt transients; Double Pulse Test; Kiselkarbid Power MOSFET; Gateinduktans; Gate Resistance; Millerperioden; dv dt och di dt transienter; Dubbelpulstest.;

    Abstract : Silicon Carbide as a wide-bandgap semiconductor has several physical and electrical advantages over Silicon for high voltage and high frequency applications. SiC as a MOSFET device has a lot of great characteristics like lower on-resistance and low input capacitances. READ MORE