Essays about: "simulation of field effect transistor"

Showing result 1 - 5 of 9 essays containing the words simulation of field effect transistor.

  1. 1. Investigation of switching power losses of SiC MOSFET : used in a DC/DC Buck converter

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : André Xavier Svensson; [2022]
    Keywords : Switching power losses; Metal Oxide Semiconductor Field Effect Transistor; Silicon carbide; Synchronous Buck converter; Wide Band Gap; Double Pulse Test; Efficiency; Temperature; Växlande effektförluster; Fälteffekttransistor; Kiselkarbid; Synchronous Buck omvandlare; Wide Band Gap; Double Pulse Test; Verkningsgrad; Temperatur;

    Abstract : All DC/DC converter products include power electronic circuits for power conversion.It is important to find an efficient way for power conversion to reduce power losses and reduce the need for cooling and achieve environmentally friendly solutions.The use of semiconductor switches of wide band gap type is a solution to the problem. READ MORE

  3. 2. Configurable, scalable single-ended sense amplifier with additional auxiliary blocks for low-power two-port memories in advanced FinFET technologies

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Limitha Subbaiah Kumar Nangaru; [2022]
    Keywords : CMOS Complementary Metal Oxide Semiconductors ; DRC Design Rule Check ; Process Corners; FinFET Fin Field Effect Transistor ; IC Integrated Circuit ; LVS Layout Versus Schematic ; Monte Carlo; Nominal Voltage; PDK Process Design Kit ; Power Delay Product; Read Bit Line; Read Word Line; SoC System on Chip ; SRAM Static Random Access Memory ; Threshold Voltage; Technology and Engineering;

    Abstract : System on Chip (SoC) designs contain a variety of Intellectual Property (IP) cores, including digital signal processing blocks, media and graphics processing units, as well as processing core units that employ multiple-port memories to enhance performance and bandwidth. These memories allow parallel read/write operations from the same memory blocks from different ports. READ MORE

  4. 3. Numerical Simulation of 3.3 kV–10 kV Silicon Carbide Super Junction-MOSFETs for High Power Electronic Applications

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Rishi Balasubramanian Saraswathy; [2022]
    Keywords : Super–Junction; DMOSFET; 4H-SiC; Silicon Carbide; Wide bandgap; 6.5 kV; 10 kV; On-state resistance; Breakdown voltage; Super–Junction; DMOSFET; 4H-SiC; kiselkarbid; bredbandgap; 6.5 kV; 10 kV; framspänningsfall; spärrspänning;

    Abstract : The thesis focuses on designing and characterizing SiC 3.3 kV Diffused Metal-Oxide Semiconductor Field-Effect Transistor (DMOSFET)s with a Ron that is significantly lower than that of current commercial devices. The On-state resistance and breakdown voltage are then adjusted by adding a Super-Junction structure. READ MORE

  5. 4. Capacitance Optimization and Ballistic Modeling of Nanowire Transistors

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Azal Alothmani; [2018]
    Keywords : Nanowire transistor; 1-D MOSFET; RF performance; permittivity; parasitic capacitance; HSQ; COMSOL Multiphysics; Technology and Engineering;

    Abstract : Downscaling of Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs) has contributed to increased microchip device density and to improve the functionality of the electronic circuits. The dimensions of state of art MOSFET is down to a few nanometers. It has been demonstrated that smaller MOSFETs are faster and more energy-efficient. READ MORE

  6. 5. Modelling Graphene Field-Effect Transistors

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Sofia Sjölander; [2017]
    Keywords : Graphene; FET; GFET; Field Effect-transistor; QMUL; Technology and Engineering;

    Abstract : Today, transistors with 20 nanometer (nm) channel length are in mass production and many researchers believe that we are reaching a limit with downsizing conventionally used silicon metal-oxide-semiconductor field-effect transistors (MOSFETs) [1]. To keep up with the trend of making the transistor smaller, new channel materials are studied, and graphene has come into the spotlight. READ MORE