Essays about: "single-pole double-throw SPDT"

Found 4 essays containing the words single-pole double-throw SPDT.

  1. 1. Performance of 2-18 GHz RF Switches Implemented in Chip & Wire Technology : Analysis of switch topologies, bias networks and an in-depth EM analysis of bondwires

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Gustav Eliasson; [2023]
    Keywords : RF Switch; PIN diode; Chip Wire Technology; Wide Bandwidth; High isolation; Single-Pole-Single-Throw; Single-Pole-Double-Throw RF Switch; PIN diode; Chip Wire Technology; Wide Bandwidth; Single-Pole-SingleThrow; Single-Pole-Double-Throw; RF-omkopplare; PIN-diod; Chip Wire Tekonologi; Bredbandig; Hög isolation; Enkelpolig-enkakast; Enkelpolig-dubbelkast;

    Abstract : The ability to control the path a signal takes through microwave circuitry is crucial when designing RF systems. The component that allows for the control of the signal path is called a switch, and it is the microwave component that this thesis will focus on. READ MORE

  3. 2. E-Band SPDT RF Switch for a Class F PA in III-V Nanowire MOSFET Technology

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Rungeng Xu; [2022]
    Keywords : E-band; III-V Nanowire MOSFET; RF Switch; Class-F PA; Technology and Engineering;

    Abstract : This project designs an RF switch operating in E-band to provide a transmit path from a Class-F power amplifier (PA). The basic RF switch is based on the single-pole double-throw (SPDT) topology using shunt transistor switches and two λ/4 transmission line. READ MORE

  4. 3. III-V Nanowire MOSFETs for mm-Wave Switch Applications

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Marcus Sandberg; [2020]
    Keywords : III-V Nanowire MOSFET; millimeter wave mmW ; millimeter-wave integrated circuit MMIC ; single-pole double-throw SPDT ; Technology and Engineering;

    Abstract : RF-switches are key components in many electronic devices as they enable routing of higher frequency signals. Increasing demands on device performance requires new technologies as well as new approaches to designs of circuits. III-V nanowire MOSFETs are a promising device technology well suited for implementation of switches. READ MORE

  5. 4. Measurement and Characterization of 28 nm FDSOI CMOS Test Circuits for an LTE Wireless Transceiver Front-End

    University essay from Linköpings universitet/Elektroniska Kretsar och System

    Author : Mohammad Billal Hossain; [2016]
    Keywords : FDSOI CMOS; Transceiver; RF Switch; LTE; and Wireless.;

    Abstract : This master thesis was part of a project at the Acreo Swedish ICT AB to investigate the 28 nm FDSOI CMOS process technology for the LTE front-end application. The project has resulted in a chip that contains different test circuits such as power amplifier (PA), mixer, low noise amplifier (LNA), RF power switch, and a receiver front-end. READ MORE