Essays about: "temperature dependent IV"
Found 4 essays containing the words temperature dependent IV.
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1. Structural analysis of HZO thin film and electrode using X-ray diffraction
University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionenAbstract : Since its discovery in 2011, the ferroelectricity of thin films based on HfO2 has been studied intensively. In particular, thin films with a 1:1 ratio of HfO2 and ZrO2 (HZO) has been of great interest. The ferroelectricity arises from a non-centrosymmetric orthorhombic (o) phase of HZO whose prevalence is dependent on the processing conditions. READ MORE
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2. Electrical analysis of interface recombination of thin-film CIGS solar cells
University essay from Uppsala universitet/Institutionen för fysik och astronomiAbstract : In this master thesis, electrical characterization of thin film CuInxGa(1−x)Se2 solar cells produced by Midsummer AB were performed with the aim of determining the dominant recombination path of these cells. Current-Voltage (IV), Quantum Effinciency (QE), temperature dependent IV (IVT) and Drive-Level Capacitance Profiling (DLCP) was used with the objective to investigate the dominant recombination path as well as provide some insight of the solar cells in order to create a baseline model using the modelling software SCAPS (Solar cell CAPacitance Simulator). READ MORE
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3. Influence of Na doping on tunnelling rear contact passivation in Cu(In,Ga)Se2 solar cells
University essay from Uppsala universitet/Fasta tillståndets elektronikAbstract : In this thesis Cu(In,Ga)Se2 (CIGS) solar cells with different sodiumdoping of the CIGS absorber and varying Al2O3 rear surface passivationlayer thickness have been manufactured and electrically characterised. Baseline samples and samples without passivation were used asreferences for the passivated samples. READ MORE
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4. Formation of NiGeSn Material for Thermoelectric Applications
University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)Abstract : Group IV-based nanowires are excellent designed thermoelectric materials for high temperature applications. Ni silicide (germanide) has been widely used to reduce the contact resistance for group IV nanowires. In this work, the interaction of Ni with relaxed, compressive and tensile strained GeSn was investigated. READ MORE