Essays about: "transistor amplifier"

Showing result 1 - 5 of 33 essays containing the words transistor amplifier.

  1. 1. E-Band SPDT RF Switch for a Class F PA in III-V Nanowire MOSFET Technology

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Rungeng Xu; [2022]
    Keywords : E-band; III-V Nanowire MOSFET; RF Switch; Class-F PA; Technology and Engineering;

    Abstract : This project designs an RF switch operating in E-band to provide a transmit path from a Class-F power amplifier (PA). The basic RF switch is based on the single-pole double-throw (SPDT) topology using shunt transistor switches and two λ/4 transmission line. READ MORE

  3. 2. D-band Power Amplifiers in Vertical InGaAs Nanowire MOSFET Technology for 100 Gbps Wireless Communication

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Patrik Blomberg; Ludvig Pile; [2022]
    Keywords : D-band; Power Amplifier; Pseudo-differential common source; Stacked; Vertical InGaAs nanowire; MOSFET; Technology and Engineering;

    Abstract : Two different topologies of power amplifiers (PAs) are designed in the frequency range 130-174.8 GHz for use in backhaul transmitters. These are the pseudo-differential common source (PDCS) and the single-ended stacked amplifier topologies. READ MORE

  4. 3. Niobium Ohmic Contacts for Cryogenic Indium Phosphide High-Electron-Mobility Transistors

    University essay from KTH/Tillämpad fysik

    Author : Linnéa Bendrot; [2022]
    Keywords : Ohmic contacts; high-electron-mobility transistor; InP; Nb films; cryogenic electronics; low-noise amplifier; quantum computing; transfer length method; superconductivity; contact barrier resistance; Ohmska kontakter; högelektronmobilitetstransistorer; indiumfosfid; niob; tunnfilm; kryogen elektronik; lågbrusförstärkare; kvantdatorer; Transfer Length-metod; supraledning; kontakt- barriärresistans;

    Abstract : Ohmic contacts are crucial components in semiconductor devices such as transistors and diodes, and lowering their contact resistance is an important factor in device performance enhancement. This is especially important for low-noise amplifiers (LNAs) where device noise temperature decreases both directly and indirectly with decreasing contact resistance. READ MORE

  5. 4. Configurable, scalable single-ended sense amplifier with additional auxiliary blocks for low-power two-port memories in advanced FinFET technologies

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Limitha Subbaiah Kumar Nangaru; [2022]
    Keywords : CMOS Complementary Metal Oxide Semiconductors ; DRC Design Rule Check ; Process Corners; FinFET Fin Field Effect Transistor ; IC Integrated Circuit ; LVS Layout Versus Schematic ; Monte Carlo; Nominal Voltage; PDK Process Design Kit ; Power Delay Product; Read Bit Line; Read Word Line; SoC System on Chip ; SRAM Static Random Access Memory ; Threshold Voltage; Technology and Engineering;

    Abstract : System on Chip (SoC) designs contain a variety of Intellectual Property (IP) cores, including digital signal processing blocks, media and graphics processing units, as well as processing core units that employ multiple-port memories to enhance performance and bandwidth. These memories allow parallel read/write operations from the same memory blocks from different ports. READ MORE

  6. 5. Design of Two 28 GHz Doherty Power Amplifier Topologies with Vertical In(Ga)As Nanowire Transistors

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Simon Olson; Lucas Nilsson-Villoresi; [2020]
    Keywords : Doherty; PA; DPA; 28 GHz; Power amplifier; nanowire; transistor; In Ga As; Technology and Engineering;

    Abstract : In this Master’s thesis, two different 28 GHz Doherty power amplifiers (DPAs) are designed, for high power added efficiency (PAE), in the common source (CS) and cascoded topology respectively. The results are analyzed and compared between the two approaches. READ MORE