Essays about: "voltage rise effect"
Showing result 1 - 5 of 7 essays containing the words voltage rise effect.
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1. Off-State Stress Effects in AlGaN/GaN HEMTs : Investigation of high-voltage off-state stress impact on performance of and its retention in hybrid-drain ohmic gate AlGaN/GaN HEMTs
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : High electron mobility transistors (HEMTs) realized using AlxGa1-xN/GaN are relatively new technology which is prominent for high-speed and high-power applications. Some of the main problems with this technology were identified as dynamic RDSon, current collapse and threshold voltage instabilities due to the off-state stress. READ MORE
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2. Parameter Tuning in a Jet Printing Machine usingReinforcement Learning
University essay from KTH/Skolan för industriell teknik och management (ITM)Abstract : Surface mount technology is a common way to assembly electrical components onto PrintedCircuit Boards (PCB). To assemble the components, solder paste is used. One way to apply solderpaste onto PCB is jet printing. READ MORE
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3. Modelling and Control of a Dual Sided Linear Induction Motor for a scaled Hyperloop Pod
University essay from KTH/FordonsdynamikAbstract : The electrification era has been marked up by an increase in volume of electric vehicles which are directly or indirectly powered by electricity. Railways, roadways and airways are being electrified as we speak at their own respective rate. READ MORE
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4. Advanced rear contact design for CIGS solar cells
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : The current trend concerning the thinning of solar cell devices is mainly motivated by economic aspects, such as the cost of the used rare-earth elements, and by the requirements of emergent technologies. The introduction of ultra-thin absorber layers results in a reduction of used materials and thus contributes to a more cost-effective and time-efficient production process. READ MORE
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5. Low-Frequency Noise in InGaAs Nanowire MOSFETs
University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionenAbstract : Low-frequency (LF) noise (1/f as well as random telegraph-signal (RTS) noise) measurements were performed on high-performance InGaAs nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs). 1/f noise measurements at room temperature (RT) show that the dominant noise mechanism is carrier number fluctuations. READ MORE