Essays about: "wide bandgap"

Showing result 1 - 5 of 15 essays containing the words wide bandgap.

  1. 1. FPGA Based Control of Multiple Electric Machines for Marine Propulsion Systems

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Simon Weideskog; [2024]
    Keywords : FPGA; Field Oriented Control; BLDC; SVPWM; SMO; Electric Drives; Electric Machines; Sliding Mode Observer; Marine Propulsion; Multiple Machines; Boat Motor; Fältorienterad styrning; marin framdrivning; elektriska drivsystem; elmaskiner; flertal maskiner; båtmotor;

    Abstract : This master thesis addresses the control of electric propulsion motors in a marine context. The focus lies mainly on the implementation of field oriented control (FOC) in a field programmable gate array (FPGA). The hypothesis is that FPGAs provide performance advantages over microcontroller-based control solutions by enabling parallel processing. READ MORE

  2. 2. Gate Drive Design for SiC MOSFET Device Characterization : Investigation into the impact of the gate inductance and resistance on the switching behaviour of SiC Power MOSFETs

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Elochukwu Mbah; [2023]
    Keywords : Silicon Carbide Power MOSFET; Gate Inductance; Gate Resistance; Miller Period; dv dt and di dt transients; Double Pulse Test; Kiselkarbid Power MOSFET; Gateinduktans; Gate Resistance; Millerperioden; dv dt och di dt transienter; Dubbelpulstest.;

    Abstract : Silicon Carbide as a wide-bandgap semiconductor has several physical and electrical advantages over Silicon for high voltage and high frequency applications. SiC as a MOSFET device has a lot of great characteristics like lower on-resistance and low input capacitances. READ MORE

  3. 3. Investigation of switching power losses of SiC MOSFET : used in a DC/DC Buck converter

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : André Xavier Svensson; [2022]
    Keywords : Switching power losses; Metal Oxide Semiconductor Field Effect Transistor; Silicon carbide; Synchronous Buck converter; Wide Band Gap; Double Pulse Test; Efficiency; Temperature; Växlande effektförluster; Fälteffekttransistor; Kiselkarbid; Synchronous Buck omvandlare; Wide Band Gap; Double Pulse Test; Verkningsgrad; Temperatur;

    Abstract : All DC/DC converter products include power electronic circuits for power conversion.It is important to find an efficient way for power conversion to reduce power losses and reduce the need for cooling and achieve environmentally friendly solutions.The use of semiconductor switches of wide band gap type is a solution to the problem. READ MORE

  4. 4. Numerical Simulation of 3.3 kV–10 kV Silicon Carbide Super Junction-MOSFETs for High Power Electronic Applications

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Rishi Balasubramanian Saraswathy; [2022]
    Keywords : Super–Junction; DMOSFET; 4H-SiC; Silicon Carbide; Wide bandgap; 6.5 kV; 10 kV; On-state resistance; Breakdown voltage; Super–Junction; DMOSFET; 4H-SiC; kiselkarbid; bredbandgap; 6.5 kV; 10 kV; framspänningsfall; spärrspänning;

    Abstract : The thesis focuses on designing and characterizing SiC 3.3 kV Diffused Metal-Oxide Semiconductor Field-Effect Transistor (DMOSFET)s with a Ron that is significantly lower than that of current commercial devices. The On-state resistance and breakdown voltage are then adjusted by adding a Super-Junction structure. READ MORE

  5. 5. Optical characterisation of AAO/CsPbBr3 perovskite nanocomposites

    University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Author : Klára Nováková; [2021]
    Keywords : perovskite; scintillator; optoelectronics; semiconductor; X-ray detection; Physics and Astronomy;

    Abstract : Direct bandgap metal lead halide perovskites offer promising optoelectronic properties desirable in a wide range of applications including photodetection. However, the incomplete and poor understanding of the photophysical processes taking place in these materials, along with their poor stability, is the bottleneck for optimisation and further development of metal halide perovskite devices. READ MORE