Design of microwave low-noise amplifiers in a SiGe BiCMOS process
In this thesis, three different types of low-noise amplifiers (LNA’s) have been designed using a 0.25 mm SiGe BiCMOS process. Firstly, a single-stage amplifier has been designed with 11 dB gain and 3.7 dB noise figure at 8 GHz. Secondly, a cascode two-stage LNA with 16 dB gain and 3.8 dB noise figure at 8 GHz is also described. Finally, a cascade two-stage LNA with a wide-band RF performance (a gain larger than unity between 2-17 GHz and a noise figure below 5 dB between 1.7 GHz and 12 GHz) is presented.
These SiGe BiCMOS LNA’s could for example be used in the microwave receivers modules of advanced phased array antennas, potentially making those more cost- effective and also more compact in size in the future.
All LNA designs presented in this report have been implemented with circuit layouts and validated through simulations using Cadence RF Spectre.
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