Investigation of Structural and Optical Properties of Nanocrystalline ZnO

Abstract: The structural quality of material (concentration and nature of defects) and optical properties (intensity and spectral emission range) of semiconductor materials are usually closely correlated. The idea of this work was to carry out a basic characterization of the structural (by X-ray diffraction technique and scanning electron microscopy) and optical (by micro photoluminescence measurements) properties of nanocrystalline ZnO samples and find a correlation. A number of ZnO samples prepared by atmospheric pressure metalorganic chemical vapor deposition at different regimes and on different substrates were investigated. According to the aim of the work the most important results can be summarized as following. The analysis of ZnO nanocrystalline structures deposited on Si (100) substrates have displayed a dependence of structural quality, morphology and microstructure as well as the optical spectral purity on the deposition temperature. The deposition at 500 ºС resulted in the massive of 1D ZnO nanopillars that demonstrated the best optical properties: a mono-emission in the ultraviolet spectral range was observed. Moreover, the results of microstructure investigation give a suggestion to the explanation of the ZnO nanopillars growth. The results obtained from ZnO on sapphire substrates revealed a moderate influence of the oxygen content during deposition on the structural quality of zinc oxide. However, a strong correlation between the oxygen content and deep-level emission intensity from ZnO nanostructures has been observed, which confirms the determinative role of oxygen for the defect emission from ZnO. It was shown that during the deposition of ZnO on specially prepared homoepitaxial template the substrate surface has not the major effect on the morphology of depositing ZnO structures. SiC was revealed to be the most appropriate substrate for hetero-deposition of textured ZnO nanostructures: the growth results in the massive of epitaxially related ZnO hexagons on the SiC (0001) plane. A number of factors - p-type conductivity of the substrate used, regular and uniform epitaxial growth of ZnO nanostructure, their excellent mono-spectral emission in short wavelength range of spectra, provides a strong background for further investigation of the electroluminescence properties of the obtained heterostructures and are of great importance for the progress of optoelectronics towards low-scaled elements.