Optimizing the RF-parameters for an III-V FinFET

Abstract: Using the 3D finite element tool COMSOL a III-V FinFET was mod- eled based on Cezar Zota, Erik Lind and Lars-Erik Wernerssons work. Using this model, the gate-source parasitic capacitance, the gate-drain parasitic capacitance, the source and drain resistances were simulated. Changing the geometry of the FinFET was done in order to optimize the transistor in regard for the transition frequency and the maximum oscillation frequency and improving the frequencies with over 350%.