Advanced processing of vertically aligned nanodevices
Abstract: Lithography technique is highly dependent on the photoresist that is used for the processing of the nanodevices. S1800 series photoresist is probably the most used positive photoresist for UV-lithography process. In this project the electrical and optical properties of the photoresist S1800 are studied in order to find if photoresist could be used as a transparent insulator for photo detectors/solar cells/LEDs. Spinning speed dependent thickness and breakdown voltage of the resist is studied, as well as its photoabsorption. It was observed that S1800 photoresist possess high resistivity and remains a strong insulator upto 400 nm thickness even with an applied bias of 100 V. It was also observed that S1800 photoresist shows higher transmission intensity comparing with ITO (Indium-Tin-Oxide) layer.
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