SYSTEMATICCHARACTERIZATION OFTHIN FILM LAYERS FORTHE DEVELOPMENT OFVERTICAL GaN-BASEDMISFETS

Abstract: A systematic study was conducted on MIS capacitors, breakdown structures andTLM structures to study the quality of dierent layers and processes involvedin the manufacturing of vertical-enhancement-mode MISFETs. Furthermore, theinuence of of a nal post-metalization annealing-step is analyzed drawing theconclusion that it is advantageous to submit nal MISFET devices to an annealingprocess lasting at least 30 minutes and to a minimum of 300C to improve themodulation capabilities of the MISFET's gate module, although degradation ispresent on both metal contacts and the blocking capabilities of the p GaN layer.