Simulation and TLM studies of vertical nanowire devices

University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

Abstract: Vertical nanowire field effect transistors (NWFETs) have in this diploma work been studied in order to examine possible benefits of introducing a highly doped shell around the nanowire channel. It could be concluded that this new device geometry significantly enhances DC performance metrics. It does however also introduce an additional potential drop which may be large enough to reduce device stability. Having the newly introduced shell at the bottom of the nanowire is seen to be best operated in a bottom ground configuration. Transmission line method (TLM) measurements were also conducted on nanowire resistors where molybdenum was observed to potentially be a more suitable contact metal to InAs and InGaAs NWs compared to tungsten.

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