Study of CVD deposited i-ZnO layers in CIGS thin film solar cells

Abstract: CIGS thin film solar cells usually include a thin layer of intrinsic zinc oxide (i-ZnO) deposited on a CdS buffer layer by sputtering. However an interest has grown in using chemical vapor deposition (CVD) instead. Hence, the aim of this thesis was to study how well CVD i-ZnO performs on a CdS buffer layer in a CIGS solar cell and how the properties of the layer can be controlled when using a hot-wall CVD reactor with diethylzinc and water as precursors. The process was characterized through depositions on glass substrates and was then successfully implemented in solar cell devices. The main influences of temperature, thickness and precursor flows on resistivity, optical band gap and film structure were mapped out. The analysis methods used included X-ray diffraction (XRD), X-ray fluorescence (XRF), four point probe resistivity measurements, mechanical profilometry and absorption spectrophotometry. In addition, the solar cell devices were characterized using external quantum efficiency (EQE) and current-voltage (IV) measurements. It was found that the CVD process was sensitive to the condition of the CdS surface, which resulted in a large distribution of shunted cells when grown on aged CdS. Unexpected trends in open-circuit voltage and fill factor were found. Both these factors increased when the growth temperature was decreased, resulting in higher conversion efficiencies. Compared to i-ZnO deposited by an in-house baseline sputtering process, the CVD process resulted in cells with higher short-circuit current due to higher EQE in the short-wavelength region. It was shown that the CVD process used is capable of producing solar cell devices whose performances contest those of cells manufactured with sputtered i-ZnO.