Ferroelectric Gate-Stack on InAs
Abstract: Modern electronics are becoming more powerful and energy efficient for every new process generation. A key component in electronics is the transistor, which has made this trend possible. For many years the transistor has simply been scaled down.However, that is not possible any longer. To continue improving the transistor, new structures and materials need to be researched. A promising topic in this field is to use a ferroelectric film to create a negative capacitance FET that could go below the 60 mV/decade limit.
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