Atomic scale modication of semiconductor nanostructure surfaces

Abstract: The III-V semiconducting compounds InAs and GaSb were studied using scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Different crystal planes of each material were investigated separately, including wafers of InAs(111)A, InAs(111)B, InAs(110), GaSb(100), GaSb(110) as well as nanowires consisting of InAs. All these materials were imaged both before and after exposure to atomic hydrogen along with moderate annealing in order to compare and characterize changes of the surface morphology. Generally, a high success rate for cleaning with atomic hydrogen was established, with atomic resolution achieved for InAs(111)A, InAs(110), GaSb(100) and the nanowires. Conclusions regarding reconstructions of the surfaces were made from STM measurements, and regarding remnant oxides and the efficiency of the cleaning recipes from XPS data.