High Temperature Memories in SiC Technology

Abstract: This thesis is part of the Working On Venus (WOV) project. The aim of the project is to design electronics in silicon carbide (SiC) that can withstand the extreme surface environmen  of Venus. This thesis investigates some possible computer memory technologies that could survive on the surface of Venus. A memory must be able to function at 460 °C and after a total radiation dose of at least 200 Gy (SiC). This thesis is a literature survey. The thesis covers several Random-Access Memory (RAM) technologies: Static RAM (SRAM), Dynamic RAM (DRAM), Ferroelectric RAM (FeRAM), Magnetic RAM (MRAM), Resistive RAM (RRAM) and Phase Change Memory (PCM). The Electrical Erasable Programmable Read-Only Memory, Flash memory and SONOS are also covered. Focus lies on device- and material-physics of the memory cells, and their extreme environment behaviour. This thesis concludes with a discussion on technology options. The technologies are compared for their suitability for extreme environment. The thesis gives a recommendation for which memory technologies should be investigated. The final recommendation is to investigate SRAM, SONOS, FeRAM and RRAM technologies for high temperature applications.