Essays about: "Wide Band Gap"

Showing result 1 - 5 of 18 essays containing the words Wide Band Gap.

  1. 1. AC Gate Bias Stress of 4H-SiC MOSFETs : An investigation into threshold voltage instability of SiC Power MOSFETs under the influence of bipolar gate stress

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Agnimitra Saha; [2023]
    Keywords : Silicon Carbide; Gate Bias Stress; Threshold Voltage; On-state Resistance; Temperature; kiselkarbid; gate spännings-stress; tröskelspänning; on-resistansen; temperatur;

    Abstract : Silicon Carbide, a wide band gap (WBG) semiconductor, has pushed electrical limits beyond Silicon (Si) when it comes to power electronics. It has offered the electrification of society showing promise for a greener future. READ MORE

  3. 2. Investigation of switching power losses of SiC MOSFET : used in a DC/DC Buck converter

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : André Xavier Svensson; [2022]
    Keywords : Switching power losses; Metal Oxide Semiconductor Field Effect Transistor; Silicon carbide; Synchronous Buck converter; Wide Band Gap; Double Pulse Test; Efficiency; Temperature; Växlande effektförluster; Fälteffekttransistor; Kiselkarbid; Synchronous Buck omvandlare; Wide Band Gap; Double Pulse Test; Verkningsgrad; Temperatur;

    Abstract : All DC/DC converter products include power electronic circuits for power conversion.It is important to find an efficient way for power conversion to reduce power losses and reduce the need for cooling and achieve environmentally friendly solutions.The use of semiconductor switches of wide band gap type is a solution to the problem. READ MORE

  4. 3. Gate oxide characterization of 4H-SiC MOS capacitors : A study of the effects of electrical stress on the flat-band voltage of n-type substrate 4H-SiC MOS capacitors

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Sotirios Maslougkas; [2021]
    Keywords : Silicon carbide; Gate oxide; Oxide characterization; MOS devices; Semiconductor- insulator interface; Kiselkarbid; Gate-oxid; Oxidkarakterisering; MOS-teknologi; halvledar-isolatorgränssnitt;

    Abstract : Silicon is the main material used in electronics. The evolution of power electronics and the need for more power efficient semiconductor devices led silicon to its limits. Silicon carbide is a promising material for electronic applications with a wide band-gap, high critical electric field, high thermal conductivity and saturation velocity. READ MORE

  5. 4. Geodesic Lens Antenna for sub-THz Imaging

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Joan Mitjans i Blasco; [2021]
    Keywords : ;

    Abstract : The Millimiter Wave (mmW) frequency band, characterized by a high atmospheric attenuation and wide available bandwidth has become of big interest for high accuracy radar imaging applications. The continuous development of the Monolithic Microwave Integrated Circuit (MMIC) technology yields to the appearance of different commercial-off-the-shelf (COTS) radar transceivers at that frequency band, where the antennas are fully integrated into the chip. READ MORE

  6. 5. Homebuilt reactor design and atomic layer deposition of metal oxide thin films

    University essay from Linköpings universitet/Institutionen för fysik, kemi och biologi

    Author : Pamburayi Mpofu; [2021]
    Keywords : Thin films; atomic layer deposition;

    Abstract : This research thesis covers work done on building an atomic layer deposition (ALD) reactor followed by the development and optimization of an ALD process for indium oxide thin films on crystalline silicon substrates from new precursors using this new homebuilt cost-effective tool. This work describes the design, building and testing of the ALD system using an indium triazenide precursor and water in a novel precursor combination. READ MORE