Essays about: "MOVPE"

Showing result 1 - 5 of 16 essays containing the word MOVPE.

1. 1. Development of thick GaN and AlGaN drift layers for vertical power devices

   University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Author : Andri Dhora; [2023]
   Keywords : Technology and Engineering;

   Abstract : High-quality, thick III-nitride epitaxial drift layers with controlled doping are needed for next-generation highly efficient vertical power devices for a smart grid applications and electrification of mobility. Achieving desirable material properties, such as low background impurity concentrations and reduced dislocation densities in combination with high growth rates, necessary for practical application present a challenge. READ MORE

3. 2. BCP Lithography Defined Arrays of InAs NWs Grown Using MOVPE with Au Seeds

   University essay from Lunds universitet/Lunds Tekniska Högskola; Lunds universitet/Fasta tillståndets fysik

   Author : Björn Landeke-Wilsmark; [2022]
   Keywords : Physics and Astronomy;

   Abstract : In this report we outline a detailed process flow for a quick and inexpensive implementation of large dense arrays of InAs nanowires (NWs) grown in the reactive ion etching/etched (RIE) pores of a SiO2/SiNx mask on top of an InAs/Si(111) substrate. The self-assembled (hexagonally close-packed) pattern of poly(methyl-methacrylate) (PMMA) cylinders in a poly(styrene) (PS) matrix adopted by a linear diblock poly(styrene-block-methyl-methacrylate) P(S-b-MMA) block-copolymer (BCP) was transferred to the dielectric stack (consisting of a ≈10 nm plasma enhanced chemical vapour deposition/deposited (PECVD) SiNX layer topped by a thin atomic layer deposition/deposited (ALD) SiO2 film) using a two-step RIE procedure. READ MORE

4. 3. AlP sacrificial layer for GaP NW growth

   University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Author : Patrick Flatt; [2020]
   Keywords : Nanowire; Substrate Reuse; Sacrificial Layer; Epitaxy; Wafer; MOVPE; Etching; GaP; AlP; SiN; Au; SEM; Physics and Astronomy;

   Abstract : III-V semiconductor nanowires (NWs) display outstanding potential for many technological applications, but their implementation into devices is restricted due to high material and fabrication costs. Common techniques for NW synthesis rely on single crystalline substrates, which are single-use and have large costs associated to them. READ MORE

5. 4. Optimization of MOVPE-grown Quantum Dots for long distance quantum communication

   University essay from KTH/Tillämpad fysik

   Author : Carlos Nuñez Lobato; [2019]
   Keywords : ;

   Abstract : .... READ MORE

6. 5. Growth of InAsSb and GaAsSb Nanowires

   University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Author : Robin Sjökvist; [2018]
   Keywords : Nanowire; Crystal Growth; Growth; MOVPE; TEM; SEM; Semiconductor; Materials Science; Physics; Technology and Engineering;

   Abstract : Att kunna ändra egenskaperna hos nanotrådar till specifika applikationer är viktigt om nanotrådar ska kunna inkorporeras i elektronikindustrin. Bandgapet är en sådan egenskap som för ternära III-V halvledare kan ändras om "ordning" uppstår i materialet. READ MORE