Essays about: "Vertical InGaAs Nanowire MOSFET Temperature Dependence Noise"

Found 1 essay containing the words Vertical InGaAs Nanowire MOSFET Temperature Dependence Noise.

  1. 1. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Sofie Johannesson; Sebastian Skog; [2022]
    Keywords : Vertical InGaAs Nanowire MOSFET Temperature Dependence Noise; Technology and Engineering;

    Abstract : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). READ MORE