Essays about: "high electron mobility transistor HEMT"

Showing result 6 - 7 of 7 essays containing the words high electron mobility transistor HEMT.

6. Design of a Low-Noise Amplifier for Radar Application in the 5 GHz Frequency Band
University essay from Högskolan i Gävle/Elektronik
Author : Javier Alvaro Rivera Suaña; [2017]
Keywords : ;

Abstract : The purpose of this project was to design and manufacture a Low-Noise Amplifier (LNA) working at a 5 GHz frequency band, by using High Electron Mobility Transistor (HEMT) from Avago Technologies. To improve our design, it was necessary to build a two-stage amplifier; one stage to work in minimum noise sensitivity, and another stage to get the maximum gain achievable by the transistor. READ MORE
7. Design and Implementation of as Asymmetric Doherty Power Amplifier at 2.65 GHz in GaN HEMT Technology
University essay from Elektroniska komponenter; Tekniska högskolan
Author : Mohsin Mumtaz Tarar; [2011]
Keywords : Asymmetric Doherty Power amplifier;

Abstract : Power amplifiers are an indispensible part of the wireless communication systems. Conventional PAs provide peak efficiency at peak output power which is obtained at a certain fixed optimum resistance. These kind of amplifiers are normally called switched-mode power amplifiers (SMPAs) and are used for constant envelope signals. READ MORE

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