E-Band SPDT RF Switch for a Class F PA in III-V Nanowire MOSFET Technology

Abstract: This project designs an RF switch operating in E-band to provide a transmit path from a Class-F power amplifier (PA). The basic RF switch is based on the single-pole double-throw (SPDT) topology using shunt transistor switches and two λ/4 transmission line. The transistors used in this project are nanowire MOSFET transistors developed by the Division of Electromagnetics and Nanoelectronics, LTH, Lund University. A simple Class-F PA is designed in single stage common source topology and uses RF switch as output matching network. This project mainly investigates the behaviors of the RF switch, especially for the PA-path, and the performances of Class-F PA. In addition, this project explores the distributed RF switch as Class-F PA output matching network, in which the λ/4 transmission line can filter out even and odd harmonics.