Essays about: "III-V Nanowire MOSFET"
Showing result 1 - 5 of 9 essays containing the words III-V Nanowire MOSFET.
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1. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). READ MORE
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2. E-Band SPDT RF Switch for a Class F PA in III-V Nanowire MOSFET Technology
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : This project designs an RF switch operating in E-band to provide a transmit path from a Class-F power amplifier (PA). The basic RF switch is based on the single-pole double-throw (SPDT) topology using shunt transistor switches and two λ/4 transmission line. READ MORE
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3. III-V Nanowire MOSFETs for mm-Wave Switch Applications
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : RF-switches are key components in many electronic devices as they enable routing of higher frequency signals. Increasing demands on device performance requires new technologies as well as new approaches to designs of circuits. III-V nanowire MOSFETs are a promising device technology well suited for implementation of switches. READ MORE
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4. Capacitance Optimization and Ballistic Modeling of Nanowire Transistors
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : Downscaling of Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs) has contributed to increased microchip device density and to improve the functionality of the electronic circuits. The dimensions of state of art MOSFET is down to a few nanometers. It has been demonstrated that smaller MOSFETs are faster and more energy-efficient. READ MORE
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5. Development of III-V RF Nanowire MOSFETs
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : The silicon MOSFET is one of the most important components used in modern electronics. The pursuit to continue fulfilling Moore’s law by scaling transistors to even smaller sizes have driven the development forward for CMOS technologies and new approaches have been necessary. READ MORE
