Silicon Drift Detector Simulations for Energy-Dispersive X-ray Spectroscopy in Scanning Electron Microscopy

Abstract: Scanning Electron Microscopy combined with Energy Dispersive X-ray Spectroscopy (SEM-EDS) is a widely applied elemental microanalysis method. The integration of silicon drift detectors (SDDs) has notably enhanced EDS performance, enabling precise elemental identification due to its large sensitive area and low output capacitance.  Accurate simulations of SDDs can provide insights that enable the design and optimization of future models without the need for costly and time-consuming experimental iterations. Moreover, the current model-based quantification methods for EDS applications have reached their maximum predictive accuracy. As such, creating a more accurate simulation model could help achieve a higher level of precision in these quantification models, which would be immensely valuable for all EDS applications.  With this objective in mind, a simulation framework for modeling SDDs in EDS was developed based on Geant4, Allpix Squared, and COMSOL Multiphysics. The simulation encompasses the entire physics pipeline, including characteristic X-ray emission from the target sample and its absorption in the detector. The generated charge carriers within the detector are propagated through the internal electric field of the SDD, and their individual charge contribution is measured to simulate EDS spectra. The simulated model was compared to existing literature and in-house experimental measurements, showing strong agreement in the case of a well-tuned SDD. Limitations of the simulation framework are discussed, and further research to enhance accuracy and speed is explored.