Essays about: "subthreshold swing"

Found 3 essays containing the words subthreshold swing.

  1. 1. Fabrication and Characterization of Quantum-well Field Effect Transistor

    University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Yang Fu; [2022]
    Keywords : quantum-well field-effect transistor; InGaAs; subthreshold swing; sheet resistance; contact resistance; electron mobility; Post Metallization Annealing; electrostatic control; Physics and Astronomy;

    Abstract : The project aims to optimize the design and fabrication of InGaAs quantum-well field-effect transistor (QW-FET) by investigating transfer and output characteristics of the QW-FET. This work found a lower source/drain contact resistance solution starting with fabricating micrometer-level gate length transistors. READ MORE

  3. 2. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Sofie Johannesson; Sebastian Skog; [2022]
    Keywords : Vertical InGaAs Nanowire MOSFET Temperature Dependence Noise; Technology and Engineering;

    Abstract : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). READ MORE

  4. 3. Ferroelectricity in nanocrystalline Hf0.5Zr0.5O2 thin films

    University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Author : Lun Sang; [2018]
    Keywords : ferroelectricity; Hf0.5Zr0.5O2; GIXRD; XRR; Technology and Engineering; Physics and Astronomy;

    Abstract : Hafnium dioxide (HfO_2) based thin films doped with various dopants (Si, Ge, Al, Gd, Sr, Zr) have been found to exhibit ferroelectricity. These dopants were found to stabilize the III orthorhombic phase in the hafnium oxide based thin films. READ MORE