Electrical and optical characteristics of InP interband nanowire infrared photodetectors

Abstract: We have investigated two devices for detection of radiation, typically in the infrared range, Photons are absorbed in an active region of semiconductor devices such that the absorption induces inter band electronic transitions and generate photo-excited charge carriers. A photocurrent is generated between the conducting contacts through the active region of the devices. We worked on infrared photodectors based on nanowires. This type of photodectors can be used for optical communication and to detect atmospheric pollution by absorption of the polluting molecules in the infrared region (0.7µm-1µm).   In this project we have used Fourier transform infrared spectroscopy to study and compared the photoresponse of two different types of interband nanowire infrared photodetectors 8samples 6080 and 6074). Fourier Transform infrared (FTIR) spectroscopy is a measurement technique that allows one to record infrared spectra in all wavelengths at then same time. The basic task was to compare and analyse the electrical and optical characteristics of these two detectors at different temperatures (78K-300K) corresponding to the wavelength.