Realization of quantum dots emitting at 1.55µm for single photon emitters

Abstract: This thesis reports is about the fabrication and characterization of InAs self-assembled quantum dots (QDs) using both InP and GaAs substrates for the realization of telecommunication-wavelength single-photon sources for quantum communication. The QDs were grown by metal organic vapour phase epitaxy (MOVPE) using the strain-driven Stranski-Krastanov formation mechanism. InAs QDs realized using an In-rich metamorphic matrix material grown on GaAs revealed narrow and bright low-temperature (4K) PL emission lines from isolated QDs up to a wavelength of 1.55 µm. These QDs offer an interesting alternative to InAs/InP QDs single-photon emitters for the telecommunication regime.