Essays about: "Al2O3"
Showing result 36 - 40 of 74 essays containing the word Al2O3.
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36. Plasmonic Effect of Metal Nanoparticles Deposited on Wide-Band Gap Metal Oxide Nanowire Substrate
University essay from Luleå tekniska universitet/Institutionen för teknikvetenskap och matematikAbstract : The application of nanowires (NWs) in solar cells (SCs) is of great interest due to their new promising aspects established in nanoelectronics. Semiconductors associated with plasmonic metal nanoparticles (NPs) such as Silver (Ag), Gold (Au) and Copper (Cu), show enhanced performance in solid state light absorbing SCs owing to plasmonic characteristic of noble metal NPs. READ MORE
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37. Fabrication and electrical characterization of Ge/GeOx/Al2O3/HfO2 MOS capacitors
University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)Abstract : Continuous scaling of complementary metal oxide semiconductor (CMOS) devices has led to constant increase in device performance. However, as scaling becomes more difficult with every technological node, alternative channel materials that could replace silicon (Si) are being investigated [1]. READ MORE
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38. A Methodology Study of the Evolution of the Secondary Brassmaking Process when Adding of Non-metallic Inclusions
University essay from KTH/MaterialvetenskapAbstract : Previously most of the research focusing on non-metallic inclusions additions have focused on Fealloys. The presence of inclusions has a great effect on the material properties of Fe-alloy. Brass (Cu-Zn) is a germicidal material which has been widely used for especially drinking water applications. READ MORE
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39. Towards Stable Li-metal electrodefor rechargeable batteries
University essay from Uppsala universitet/StrukturkemiAbstract : Different types of alumina containing coatings were made on lithiumand copper in the purpose to mechanically hinder the growth ofdendrites. Lithium, coated with polymer-alumina composites wereplaced in symmetric cells for in situ studies by a light microscope. READ MORE
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40. Evaluation of ALD Oxides as the Sensing Layer for Ion Sensors
University essay from Uppsala universitet/Fasta tillståndets elektronikAbstract : In this thesis thin films of aluminium(III) oxide (Al2O3), titanium dioxide (TiO2), and tantalum(V) oxide (Ta2O5) were evaluated as the sensing layer for ion sensors. The oxide films were deposited using atomic layer deposition (ALD) and characterized with ellipsometry. READ MORE